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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-11-10
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] SDM2016-80
pp.9-14
SDM 2006-06-21
15:20
Hiroshima Faculty Club, Hiroshima Univ. Work-function engineering of poly-Si gate by Fermi level pinning and its impact on low power CMOSFET
Yasuhiro Shimamoto (Hitachi), Jiro Yugami, Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Masahiro Yoneda (Renesas)
 [more] SDM2006-47
pp.31-35
ICD, SDM 2005-08-19
11:35
Hokkaido HAKODATE KOKUSAI HOTEL Gate work-function modulation in SiON/poly-Si gate stacks, and its impact on low power devices -- Advantage of sub-monolayer Hf at SiON/poly-Si interface --
Jiro Yugami (Renesas), Yasuhiro Shimamoto (Hitachi), Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Katsuya Shiga, Fumiko Fujita, Jyunichi Tuchimoto, Yoshikazu Ohno, Masahiro Yoneda (Renesas)
Gate work-function (WF) is controlled by incorporating sub-monolayer Hf at SiON/poly-Si interface. This technique provid... [more] SDM2005-149 ICD2005-88
pp.37-42
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