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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2016-11-10 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80 |
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] |
SDM2016-80 pp.9-14 |
SDM |
2006-06-21 15:20 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Work-function engineering of poly-Si gate by Fermi level pinning and its impact on low power CMOSFET Yasuhiro Shimamoto (Hitachi), Jiro Yugami, Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Masahiro Yoneda (Renesas) |
[more] |
SDM2006-47 pp.31-35 |
ICD, SDM |
2005-08-19 11:35 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Gate work-function modulation in SiON/poly-Si gate stacks, and its impact on low power devices
-- Advantage of sub-monolayer Hf at SiON/poly-Si interface -- Jiro Yugami (Renesas), Yasuhiro Shimamoto (Hitachi), Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Katsuya Shiga, Fumiko Fujita, Jyunichi Tuchimoto, Yoshikazu Ohno, Masahiro Yoneda (Renesas) |
Gate work-function (WF) is controlled by incorporating sub-monolayer Hf at SiON/poly-Si interface. This technique provid... [more] |
SDM2005-149 ICD2005-88 pp.37-42 |
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