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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 19 of 19  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2022-11-25
14:10
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Growth and device application of InGaN-based nanocolumn crystals using various crystal planes
Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.) ED2022-46 CPM2022-71 LQE2022-79
In this study, we investigated the growth of InGaN-based nanocolumns with various crystal orientations and the fabricati... [more] ED2022-46 CPM2022-71 LQE2022-79
pp.99-102
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-29
10:20
Toyama Toyama Univ. Sensing operation based on AlGaN nanorings
Hoshi Takeshima, Tetsuya Kouno, Sho Suzuki (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.), Kazuhiko Hara (Shizuoka Univ.) EID2015-36
 [more] EID2015-36
pp.89-91
ED, CPM, SDM 2015-05-28
14:15
Aichi Venture Business Laboratory, Toyohashi University of Technology Optical properties of InGaN nanoplates grown by molecular beam epitaxy
Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) ED2015-19 CPM2015-4 SDM2015-21
We fabricated InGaN nanoplates on top of GaN nanocolumns by radio-frequency plasma-assisted molecular beam epitaxy. The ... [more] ED2015-19 CPM2015-4 SDM2015-21
pp.17-19
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2015-01-23
11:02
Kyoto Ryukoku University Investigation of optical property of triangular GaN microdisk fabricated via top-down process
Sho Suzuki, Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia Univ.), Kazuhiko Hara (Shizuoka Univ.) EID2014-53
Triangular GaN microdisk arrays were fabricated by an electron-beam lithography and an inductively coupled plasma reacti... [more] EID2014-53
pp.103-105
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2015-01-23
11:10
Kyoto Ryukoku University Radiation patterns of lasing light based on uasi-whispering-gallery-mode in thin hexagonal GaN microdisk
Tetsuya Kouno, Sho Suzuki (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) EID2014-54
The thin hexagonal GaN microdisks with the side length and thickness of approximately 1.5 um and 250 nm, respectively, w... [more] EID2014-54
pp.107-109
LQE, ED, CPM 2014-11-28
16:25
Osaka   Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Tomohiro Noma, Hiroaki Hayashi, Daishi Fukushima, Yuta Konno, Ichiro Nomura, Katsumi Kishino (Sophia Univ.) ED2014-97 CPM2014-154 LQE2014-125
Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitr... [more] ED2014-97 CPM2014-154 LQE2014-125
pp.117-120
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2014-01-24
14:26
Niigata Niigata University Optically pumped lasing action in hexagonal GaN microdisk array fabricated via top-down process
Sho Suzuki, Tetsuya Kouno (Shizuoka Univ.), Koji Ynamano, Katsumi Kishino (Sophia Univ.), Kazuhiko Hara (Shizuoka Univ.) EID2013-15
Hexagonal GaN microdisk array was fabricated by an electron-beam lithography and an inductively coupled plasma reactive ... [more] EID2013-15
pp.29-31
ITE-IDY, EID, IEE-EDD 2013-01-24
13:30
Shizuoka Shizuoka Univ. Investigation of the optical resonant systems of hexagonal GaN microdisks
Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia Univ.), Kazuhiko Hara (Shizuoka Univ.) EID2012-14
The optical resonant systems of hexagonal GaN microdisks with 1 to 2 micron satellite lengths are discussed with numeric... [more] EID2012-14
pp.1-3
OPE, LQE, EMD, CPM, OME
(Joint) [detail]
2012-06-22
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Development of Green Semiconductor Lasers
Katsumi Kishino (Sophia Univ.) OPE2012-17 LQE2012-21
 [more] OPE2012-17 LQE2012-21
pp.39-44
LQE, ED, CPM 2011-11-18
15:05
Kyoto Katsura Hall,Kyoto Univ. Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121
We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at t... [more] ED2011-98 CPM2011-147 LQE2011-121
pp.127-130
ED, LQE, CPM 2009-11-19
10:25
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique
Jumpei Kamimura, Katsumi Kishino, Akihiko Kikuchi (Sophia Univ./JST) ED2009-131 CPM2009-105 LQE2009-110
 [more] ED2009-131 CPM2009-105 LQE2009-110
pp.13-18
LQE 2008-12-12
15:10
Tokyo Kikai-Shinko-Kaikan Bldg. Development of II-VI materials on InP substrates for green semiconductor laser diodes
Ichirou Nomura, Katsumi Kishino, Tomoya Ebisawa, Shun Kushida, Kunihiko Tasai, Hitoshi Nakamura, Tsunenori Asatsuma, Hiroshi Nakajima (Sophia Univ.) LQE2008-138
MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visi... [more] LQE2008-138
pp.53-58
LQE, ED, CPM 2008-11-27
09:30
Aichi Nagoya Institute of Technology Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy
Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) ED2008-152 CPM2008-101 LQE2008-96
GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arra... [more] ED2008-152 CPM2008-101 LQE2008-96
pp.1-6
LQE, ED, CPM 2008-11-27
09:55
Aichi Nagoya Institute of Technology Random lasing in GaN nanocolumns
Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) ED2008-153 CPM2008-102 LQE2008-97
Self-organized GaN nanocolumns are one-dimensional columnar nano-crystals, which have about 100 nm in diameter and 1 $\m... [more] ED2008-153 CPM2008-102 LQE2008-97
pp.7-12
CPM, ED, LQE 2007-10-11
13:55
Fukui Fukui Univ. Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy
Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-158 CPM2007-84 LQE2007-59
GaN nanocolumns have excellent optical characteristics due to islocation-free nature. GaN/AlGaN nanocolumn LEDs grown on... [more] ED2007-158 CPM2007-84 LQE2007-59
pp.13-17
LQE, OPE 2007-06-29
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. Intersubband transition in GaN/AlN multiple quantum disk nanocolumns
Kaiichi Tanaka, Keita Ikuno, Yohei Kasai, Kazuya Fukunaga (Sophia Univ.), Hideyuki Kunugita, Kazuhiro Ema, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ/JST-CREST) OPE2007-22 LQE2007-23
The electronic relaxation process of intersubband transition (ISBT) in semiconductor quantum wells is extremely fast due... [more] OPE2007-22 LQE2007-23
pp.29-33
ED, CPM, LQE 2006-10-06
10:20
Kyoto   Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of nex... [more] ED2006-163 CPM2006-100 LQE2006-67
pp.63-67
LQE, ED, CPM 2005-10-13
11:00
Shiga Ritsumeikan Univ. Growth and characterization of InN/InGaN multiple quantum wells by RF-MBE
Tatsuo Ohashi, Shunsuke Ishizawa, Petter Holmström, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
 [more] ED2005-122 CPM2005-109 LQE2005-49
pp.17-21
LQE, ED, CPM 2005-10-14
14:50
Shiga Ritsumeikan Univ. Growth and charctrization of InGaN nanocolumn LED by RF-MBE
Akihiko Kikuchi, Makoto Tada, Katsumi Kishino (Sophia Univ.)
 [more] ED2005-152 CPM2005-139 LQE2005-79
pp.61-65
 Results 1 - 19 of 19  /   
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