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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, LQE, CPM |
2009-11-19
15:20 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN
Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ)  ED2009-140 CPM2009-114 LQE2009-119 |
High In content GaInN films are promising for many applications such as multi-junction tandem photovoltaic cells, high p... [more] |
ED2009-140 CPM2009-114 LQE2009-119
pp.57-60 |
| ED, LQE, CPM |
2009-11-19
16:10 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Reduction in operating voltage of UV laser diode
Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) ED2009-142 CPM2009-116 LQE2009-121 |
Annealing condition for n-type electrode in AlGaN-based UV LD was investigated. High temperature annealing is found to b... [more] |
ED2009-142 CPM2009-116 LQE2009-121
pp.65-69 |
| ED, LQE, CPM |
2009-11-19
17:10 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
High Efficiency ultraviolet emitters by activation annealing in oxygen flow
Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-144 CPM2009-118 LQE2009-123 |
Activation annealing of Mg-doped p-type Al0.17Ga0.83N in different gases was conducted. The hole concentration in Al0.17... [more] |
ED2009-144 CPM2009-118 LQE2009-123
pp.75-80 |
| ED |
2009-07-30
16:15 |
Osaka |
Osaka Univ. Icho-Kaikan |
Threshold voltage control and temperature dependence of normally off mode AlGaN/GaN HFET with p-type GaN gate
Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-108 |
[more] |
ED2009-108
pp.33-37 |
| CPM, ED, SDM |
2008-05-16
10:25 |
Aichi |
Nagoya Institute of Technology |
Dislocation in AlGaN grown on grooved AlN
Toshiaki Mori, Toshiaki Asai, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-12 CPM2008-20 SDM2008-32 |
[more] |
ED2008-12 CPM2008-20 SDM2008-32
pp.57-60 |
| CPM, ED, SDM |
2008-05-16
10:50 |
Aichi |
Nagoya Institute of Technology |
On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact
Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33 |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] |
ED2008-13 CPM2008-21 SDM2008-33
pp.61-66 |
| ED, CPM, LQE |
2006-10-06
13:40 |
Kyoto |
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Fabrication and Characterization of UV light emitter on various substrates
Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko) |
[more] |
ED2006-168 CPM2006-105 LQE2006-72
pp.87-92 |
| ED, CPM, SDM |
2006-05-19
09:00 |
Aichi |
VBL, Toyohashi University of Technology |
Microstructure of group-III nitride semiconductors grown on m-plane SiC
Tetsuya Nagai, Takeshi Kawashima, Kiyotaka Nakano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) |
[more] |
ED2006-29 CPM2006-16 SDM2006-29
pp.51-54 |
| LQE, ED, CPM |
2005-10-14
11:10 |
Shiga |
Ritsumeikan Univ. |
Growth of AlN crystal on various SiC substrates by sublimation method
Noritaka Tsuchiya, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Kenji Shimono, Tadashi Noro, Takashi Takagi (Ibiden Co. Ltd), Tomoaki Furusho (SiXON Ldt.) |
Bulk AlN has attracted much attention as a substrate for the fabrication of UV/DUV devices and high power electronic dev... [more] |
ED2005-145 CPM2005-132 LQE2005-72
pp.29-34 |
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