IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 49 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2014-05-29
09:40		 Aichi   The effects of polarization charges to carrier transport in nitride-based LEDs
Syouta Katsuno, Kento Hayashi, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2014-33 CPM2014-16 SDM2014-31		 It has been reported that one of the reasons of carrier overflow is polarization charges induced at hetero interfaces. I... [more] ED2014-33 CPM2014-16 SDM2014-31
pp.75-80
CPM, ED, SDM 2014-05-29
10:00		 Aichi   Application to flame sensor of nitride-based hetero-field-effect-transistor-type ultraviolet photo detectors
Yuma Yamamoto, Takuya Murase, Mami Ishiguro, Tomoaki Yamada, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2014-34 CPM2014-17 SDM2014-32		 In this study, we fabricated high-performance AlGaN/AlN heterostructure-field effect-transistor-type (HFET-type) UV phot... [more] ED2014-34 CPM2014-17 SDM2014-32
pp.81-84
CPM, LQE, ED 2013-11-28
11:25		 Osaka   Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED
Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-66 CPM2013-125 LQE2013-101		 We have aimed to improve the light extraction efficiency by using p- and n- high-reflectivity indium tin oxide /Al elect... [more] ED2013-66 CPM2013-125 LQE2013-101
pp.11-16
CPM, LQE, ED 2013-11-28
17:05		 Osaka   Fabrication of the multi-junction GaInN based solar cells using tunnel junction
Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2013-76 CPM2013-135 LQE2013-111		  [more] ED2013-76 CPM2013-135 LQE2013-111
pp.57-61
ED, LQE, CPM 2012-11-30
10:20		 Osaka Osaka City University Nitride semiconductor np-LEDs for improvement of efficiency droop
Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.) ED2012-79 CPM2012-136 LQE2012-107		 A decrease of external quantum efficiency with an increase of injection current in nitride semiconductor LEDs, a so-call... [more] ED2012-79 CPM2012-136 LQE2012-107
pp.59-64
ED, LQE, CPM 2012-11-30
11:50		 Osaka Osaka City University Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs
Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-82 CPM2012-139 LQE2012-110		 Fabrication processes of a moth-eye patterned sapphire substrate (MPSS), which can enhance a light extraction efficiency... [more] ED2012-82 CPM2012-139 LQE2012-110
pp.75-80
ED, LQE, CPM 2012-11-30
13:15		 Osaka Osaka City University Mg acceptor activation inp-GaN of the structure with n-GaN surface
Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-83 CPM2012-140 LQE2012-111		 Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopa... [more] ED2012-83 CPM2012-140 LQE2012-111
pp.81-85
LQE, ED, CPM 2011-11-17
17:35		 Kyoto Katsura Hall，Kyoto Univ. Concentrating properties of nitride-based solar cells
Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-87 CPM2011-136 LQE2011-110		 In this study, we investigated the concentrating properties of nitride based solar cells up to 200 suns. The conversion ... [more] ED2011-87 CPM2011-136 LQE2011-110
pp.71-75
LQE, ED, CPM 2011-11-18
09:55		 Kyoto Katsura Hall，Kyoto Univ. Microstructural observation of AlGaN on ELO-AlN
Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-89 CPM2011-138 LQE2011-112		 AlGaN-based ultraviolet light emitting device has been achieved as the high spec LED from UV-A to UV-C. It is widely exp... [more] ED2011-89 CPM2011-138 LQE2011-112
pp.81-85
CPM, SDM, ED 2011-05-19
16:40		 Aichi Nagoya Univ. (VBL) Growth of GaN and AlGaN on B-Ga2O3 (100) substrate
Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki, Hiroshi Amano (Meijo Univ/Nagoya Univ) ED2011-16 CPM2011-23 SDM2011-29		 beta-Ga2O3 is one of the most attractive substrates for AlGaN-based UV light-emitting-diodes (LEDs). Its transparency up... [more] ED2011-16 CPM2011-23 SDM2011-29
pp.77-81
CPM, SDM, ED 2011-05-19
17:05		 Aichi Nagoya Univ. (VBL) MOVPE growth of nitrides analyzed using a novel in situ X-ray diffraction system
Daiki Tanaka, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2011-17 CPM2011-24 SDM2011-30		  [more] ED2011-17 CPM2011-24 SDM2011-30
pp.83-87
CPM, SDM, ED 2011-05-19
17:30		 Aichi Nagoya Univ. (VBL) High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates
Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-18 CPM2011-25 SDM2011-31		 AlN/GaN multilayer structures have relatively large refractive index differences in the group-III nitride semiconductors... [more] ED2011-18 CPM2011-25 SDM2011-31
pp.89-93
CPM, SDM, ED 2011-05-20
09:25		 Aichi Nagoya Univ. (VBL) Current path control with Nitride semiconductor-based tunnel junction
Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33		 Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the follo... [more] ED2011-20 CPM2011-27 SDM2011-33
pp.99-104
CPM, SDM, ED 2011-05-20
09:50		 Aichi Nagoya Univ. (VBL) Fabrication of GaN-based Tunnel Junctions
Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) ED2011-21 CPM2011-28 SDM2011-34		 We have investigated nitride semiconductor-based tunnel junctions for a novel current injection, not restricted with the... [more] ED2011-21 CPM2011-28 SDM2011-34
pp.105-110
CPM, SDM, ED 2011-05-20
10:50		 Aichi Nagoya Univ. (VBL) High reflective electrode for UV light emitting diodes
Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Unv.), Hiroshi Amano (Nagoya Univ.) ED2011-23 CPM2011-30 SDM2011-36		 Light extraction efficiency is one of the most critical factors for improving the efficiency of UV-LEDs. Combination of ... [more] ED2011-23 CPM2011-30 SDM2011-36
pp.117-121
CPM, SDM, ED 2011-05-20
11:40		 Aichi Nagoya Univ. (VBL) Internal quantum efficiency of AlGaN multiquantum wells
Junichi Yamamoto, Kazuhito Ban, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-25 CPM2011-32 SDM2011-38		 We analyzed the IQE of whole-composition-range AlGaN multi-quantum wells (MQWs) on AlGaN with various dislocation densit... [more] ED2011-25 CPM2011-32 SDM2011-38
pp.127-130
CPM, SDM, ED 2011-05-20
15:40		 Aichi Nagoya Univ. (VBL) Fabrication of non-polar a-plane nitride based solar cells
Tatsuro Nakao, Yosuke Kuwahara, Yasuharu Fuziyama, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-32 CPM2011-39 SDM2011-45		 n this study, we fabricated and charactrized nitride-based solar cells on a non-polar a-plane GaN template on an r-plane... [more] ED2011-32 CPM2011-39 SDM2011-45
pp.163-167
CPM, SDM, ED 2011-05-20
16:05		 Aichi Nagoya Univ. (VBL) Fabrication of nitride-based solar cells electrode structure
Shota Yamamoto, Yoshiki Morita, Yosuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-33 CPM2011-40 SDM2011-46		 We used grid electrode for improving efficiency of nitride-based photovoltaic cell. Compared with the conventional semit... [more] ED2011-33 CPM2011-40 SDM2011-46
pp.169-173
CPM, SDM, ED 2011-05-20
16:40		 Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47		 We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
CPM, SDM, ED 2011-05-20
17:05		 Aichi Nagoya Univ. (VBL) Study on AlInN barrier layer of GaInN channel HFET
Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Naofumi Horio, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-35 CPM2011-42 SDM2011-48		 GaInN channel heterostructure field-effect transistors (HFETs) are promising for applications involving high operation c... [more] ED2011-35 CPM2011-42 SDM2011-48
pp.179-183
 Results 21 - 40 of 49 [Previous]  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan