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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-12-01 14:00 |
Shizuoka | High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama (Meijo Univ.)  ED2023-31 CPM2023-73 LQE2023-71 |
In-situ layer thickness controls with in-situ reflectivity spectra measurements have been actively used in commercialize... [more] | ED2023-31 CPM2023-73 LQE2023-71 pp.76-79 |
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| LQE, ED, CPM | 2023-12-01 14:25 |
Shizuoka | Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer Ruka Watanabe, Kenta Kobayashi, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.) ED2023-32 CPM2023-74 LQE2023-72 |
In the fabrication of vertical-cavity surface-emitting lasers (VCSELs), high controllability of the resonance wavelength... [more] | ED2023-32 CPM2023-74 LQE2023-72 pp.80-83 |
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| LQE, ED, CPM | 2023-12-01 14:50 |
Shizuoka | Fabrication of vertical AlGaN-based UV-B LD Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.) ED2023-33 CPM2023-75 LQE2023-73 |
In this study, we report on the fabrication method and characteristics of vertical UV-B laser diodes, which are advantag... [more] | ED2023-33 CPM2023-75 LQE2023-73 pp.84-87 |
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| LQE, ED, CPM | 2023-12-01 16:15 |
Shizuoka | The properties of UV-B laser diodes on AlN nanopillars by using wet etching method Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76 |
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and thr... [more] | ED2023-36 CPM2023-78 LQE2023-76 pp.98-101 |
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| CPM, ED, LQE | 2022-11-25 13:20 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.) ED2022-44 CPM2022-69 LQE2022-77 |
[more] | ED2022-44 CPM2022-69 LQE2022-77 pp.89-92 |
| ED, CPM, LQE | 2021-11-25 13:05 |
Online | Online | [Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.) ED2021-19 CPM2021-53 LQE2021-31 |
(To be available after the conference date) [more] | ED2021-19 CPM2021-53 LQE2021-31 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 10:45 |
Online | Online | Calculation of carrier injection efficiency of AlGaN UVB Laser Diode Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-3 CPM2020-24 LQE2020-54 |
[more] | ED2020-3 CPM2020-24 LQE2020-54 pp.9-12 |
| LQE, CPM, ED | 2020-11-27 13:00 |
Online | Online | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.) ED2020-18 CPM2020-39 LQE2020-69 |
Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a... [more] | ED2020-18 CPM2020-39 LQE2020-69 pp.67-70 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| LQE, CPM, ED | 2020-11-27 13:40 |
Online | Online | Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] | ED2020-20 CPM2020-41 LQE2020-71 pp.75-78 |
| CPM, LQE, ED | 2019-11-21 14:35 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | AlGaN-based electron beam excitation UV lasers using AlGaN well layer Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86 |
(To be available after the conference date) [more] | ED2019-43 CPM2019-62 LQE2019-86 pp.45-48 |
| CPM, LQE, ED | 2019-11-21 15:50 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89 |
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] | ED2019-46 CPM2019-65 LQE2019-89 pp.57-60 |
| CPM, LQE, ED | 2019-11-22 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98 |
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] | ED2019-55 CPM2019-74 LQE2019-98 pp.93-96 |
| ED, LQE, CPM | 2018-11-30 12:40 |
Aichi | Nagoya Inst. tech. | GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 |
We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity... [more] | ED2018-47 CPM2018-81 LQE2018-101 pp.71-74 |
| LQE, CPM, ED | 2017-12-01 10:30 |
Aichi | Nagoya Inst. tech. | Two-step graded p-AlGaN structure for deep UV-LEDs Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2017-59 CPM2017-102 LQE2017-72 |
[more] | ED2017-59 CPM2017-102 LQE2017-72 pp.49-53 |
| LQE, CPM, ED | 2017-12-01 14:20 |
Aichi | Nagoya Inst. tech. | Two-step crystal growth of GaN nanowire by MOCVD Kohei Sasai, Myunghee KIM, Atusi Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki (Meijo Univ.) ED2017-65 CPM2017-108 LQE2017-78 |
[more] | ED2017-65 CPM2017-108 LQE2017-78 pp.77-82 |
| ED, LQE, CPM | 2015-11-26 11:20 |
Osaka | Osaka City University Media Center | AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102 |
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] | ED2015-70 CPM2015-105 LQE2015-102 pp.11-14 |
| CPM, ED, SDM | 2014-05-28 10:50 |
Aichi | Dislocation density dependence of strain relaxation in GaInN/GaN heterostructure Koji Ishihara, Yasunari Kondo, Hiroyuki Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2014-18 CPM2014-1 SDM2014-16 |
In this study, we investigated the critical thickness in GaInN/GaN heterostructure system as function of dislocation den... [more] | ED2014-18 CPM2014-1 SDM2014-16 pp.1-6 |
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| CPM, ED, SDM | 2014-05-28 11:10 |
Aichi | Investigations on Sb incoporations and surface morphologies of GaNSb Daisuke Komori, Hiroki Sasajima, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (meijo Univ.), Isamu Akasaki (meijo Univ./nagoya Univ.) ED2014-19 CPM2014-2 SDM2014-17 |
It is difficult to form high quality nitride-based heterostructures with widely different compositions since large diffe... [more] | ED2014-19 CPM2014-2 SDM2014-17 pp.7-10 |
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| CPM, ED, SDM | 2014-05-29 09:00 |
Aichi | Investigation of laser scribing in fabrication of nitride-based LEDs for improvement of light-absorptive Shun Hanai (Meijo Univ.), Atsushi Suzuki, Tsukasa Kitano (ELSEED), Daisuke Iida, Takahisa Kato, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2014-31 CPM2014-14 SDM2014-29 |
For reduction of a manufacturing cost of the light-emitting-diode (LED), it is necessary to reduce the distance of indiv... [more] | ED2014-31 CPM2014-14 SDM2014-29 pp.65-68 |
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