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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2012-01-12 10:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Study of source charging time in InGaAs MOSFET Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech) ED2011-129 MW2011-152 |
When ballistic transportation of electrons in the channel of MOSFET is realized by channel shrinkage, drain current is c... [more] |
ED2011-129 MW2011-152 pp.59-62 |
ED, MW |
2010-01-14 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165 |
We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] |
ED2009-182 MW2009-165 pp.43-48 |
MW, ED |
2009-01-15 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2008-212 MW2008-177 |
Abstract We report a Monte Carlo analysis of base transit time in ultra-thin and heavily-doped InP/InGaAs HBT’s. In ultr... [more] |
ED2008-212 MW2008-177 pp.83-88 |
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