| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MICT, MI | 2018-11-06 16:40 |
Hyogo | University of Hyogo | [Short Paper]
Matsuzaki Hiroki, Yamada Atsushi, Takeda Iori, Mizutani Hiroya (Univ. of Tokyo), Ono Toshitsugu (Tokyo Univ.), Koike Kazuhiko, Ushiku Yoshitaka, Naganuma Kazunori, Onodera Hiroshi (Univ. of Tokyo)  MICT2018-53 MI2018-53 |
The endoscopic biopsy specimen of the gastrointestinal tract is made transparent, and the tumor is detected by deep lear... [more] | MICT2018-53 MI2018-53 pp.65-66 |
| US | 2018-06-21 13:25 |
Kanagawa | Verification of influence of specimen surface shape in speed of sound analysis by ultra-high frequency ultrasound Toshiki Matsuzaki, Atsuko Yamada, Kazuki Tamura, Kazuyo Ito, Kenji Yoshida, Tadashi Yamaguchi (Chiba Univ.) US2018-21 |
High-accuracy measurement of acoustic properties of microstructures using ultra-high frequency ultrasound (< 100 MHz) is... [more] | US2018-21 pp.7-12 |
|
| CPM, LQE, ED | 2016-12-12 13:00 |
Kyoto | Kyoto University | Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73 |
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] | ED2016-57 CPM2016-90 LQE2016-73 pp.1-4 |
| LQE | 2012-12-13 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1550nm/1310nm dual wavelength high power LD Shintaro Morimoto, Hiroshi Mori, Atsushi Yamada, Yasuaki Nagashima, Motoaki Fujita, Shinichi Onuki, Hiroaki Yoshidaya, Kazuaki Mise (Anritsu Devices) LQE2012-125 |
We have developed a high power 1550nm/1310nm dual wavelength laser diode, which is suitable for Optical Time Domain Refl... [more] | LQE2012-125 pp.19-22 |
| LQE, ED, CPM | 2011-11-17 16:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108 |
[more] | ED2011-85 CPM2011-134 LQE2011-108 pp.61-65 |
| ED | 2009-06-12 11:25 |
Tokyo | Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] | ED2009-48 pp.63-67 |
|
| IN, ICM, LOIS (Joint) |
2006-01-20 09:00 |
Kyoto | Kyoto Univ. | Notes on Degital WaterMark for Outline Font Atsushi Yamada, Hiroyuki Inaba (KIT) |
Recently, protecting intellectual property rights of digital scalable fonts have been one of the most important problems... [more] | OIS2005-79 pp.1-4 |
[Return to Top Page]