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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SRW 2017-11-13
14:40
Tokyo NICT (Koganei) [Poster Presentation] OTA(Over the Air) Measurement Solution
Junichi Tanaka, Masashi Yamaguchi (Rode&Schwarz) SRW2017-53
 [more] SRW2017-53
pp.37-38
CPM, LQE, ED 2013-11-29
10:20
Osaka   Growth of thick InGaN epilayer by high-pressure MOVPE
Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.)
 [more]
ED, SDM, CPM 2012-05-17
14:30
Aichi VBL, Toyohashi Univ. of Technol. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] ED2012-20 CPM2012-4 SDM2012-22
pp.15-18
CPM, SDM, ED 2011-05-19
13:25
Aichi Nagoya Univ. (VBL) Growth of InGaN nanowires on a (111)Si substrate by RF-MBE
Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2011-9 CPM2011-16 SDM2011-22
InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempt... [more] ED2011-9 CPM2011-16 SDM2011-22
pp.45-48
CPM, SDM, ED 2011-05-19
15:15
Aichi Nagoya Univ. (VBL) MOVPE growth of thick InGaN on (1-101)GaN/Si
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) ED2011-13 CPM2011-20 SDM2011-26
We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of les... [more] ED2011-13 CPM2011-20 SDM2011-26
pp.63-66
CPM, SDM, ED 2011-05-20
11:15
Aichi Nagoya Univ. (VBL) Aging test of AlGaN-based ultraviolet light emitting diodes -- The Degradation Mechanism of UV-LED --
Park Gwi Jin, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Tetsuhiko Inazu, Takehiko Fujita, Cyril Pernot, Akira Hirano (UV Craftory) ED2011-24 CPM2011-31 SDM2011-37
 [more] ED2011-24 CPM2011-31 SDM2011-37
pp.123-126
CPM, SDM, ED 2011-05-20
16:40
Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
ED, SDM 2010-02-22
14:50
Okinawa Okinawaken-Seinen-Kaikan MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN str... [more] ED2009-200 SDM2009-197
pp.23-28
ED, CPM, SDM 2009-05-15
09:25
Aichi Satellite Office, Toyohashi Univ. of Technology MBE-VLS growth of compound semiconductors nanowires on Si substrates
Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.) ED2009-27 CPM2009-17 SDM2009-17
Compound semiconductor nanowires (NWs) attract attention for the application to opro-electronic integrated circuit (OEIC... [more] ED2009-27 CPM2009-17 SDM2009-17
pp.49-52
ED, SDM 2008-01-30
13:30
Hokkaido   MBE-VLS growth of GaAs nanowires on (111)Si substrate
Masahito Yamaguchi, Ji-Hyun Paek, Tatsuya Nishiwaki, Yutaka Yoshida, Nobuhiko Sawaki (Nagoya Univ.) ED2007-237 SDM2007-248
 [more] ED2007-237 SDM2007-248
pp.1-4
CPM, ED, LQE 2007-10-12
15:05
Fukui Fukui Univ. Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate
Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) ED2007-176 CPM2007-102 LQE2007-77
Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal str... [more] ED2007-176 CPM2007-102 LQE2007-77
pp.97-102
ED 2007-06-15
17:05
Toyama Toyama Univ. Optical control of triple quantum disks on waveguide structure
Masahito Yamaguchi, Minori Yokoi (Nagoya Univ.), Hidetoshi Takagi (Ube N.C.T.), Nobuhiko Sawaki (Nagoya Univ.) ED2007-40
We prepared a GaAs/AlGaAs triple quantum disk (TQD) located near the GaAs quantum well (QW) waveguide for the realizatio... [more] ED2007-40
pp.51-56
DE 2006-07-12
14:45
Niigata HOTEL SENKEI Discovering and Visualizing Coordinate Terms and Topic Terms Using Search Engine Query Log
Masashi Yamaguchi, Hiroaki Ohshima, Satoshi Oyama, Katsumi Tanaka (Kyoto Univ.)
We propose a method for searching coordinate terms and topic terms by using search engine query logs. “Coordinate terms"... [more] DE2006-42
pp.121-126
 Results 1 - 13 of 13  /   
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