Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW |
2014-03-05 14:20 |
Ehime |
Ehime University |
An X-Band GaN High-Power Amplifier with Input and Output 2nd-harmonic Terminating Networks Hiromitsu Uchida, Masatake Hangai, Koji Yamanaka, Hiroshi Fukumoto, Nobuhiro Kikuchi, Hidetoshi Koyama, Yoshitaka Kamo (Mitsubishi Electric) MW2013-219 |
[more] |
MW2013-219 pp.129-132 |
MW, ED |
2013-01-18 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151 |
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] |
ED2012-121 MW2012-151 pp.49-52 |
MW, ED |
2013-01-18 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] |
ED2012-125 MW2012-155 pp.69-74 |
MW |
2012-11-21 14:45 |
Okinawa |
|
[Special Talk]
Report on 2012 IEEE MTT-S International Microwave Symposium Takashi Shimizu (Utsunomiya Univ.), Masataka Ohira (Saitama Univ.), Hiroshi Okazaki (NTT DOCOMO), Chun-Ping Chen (Kanagawa Univ.), Shoichi Narahashi (NTT DOCOMO), Ramesh Pokharel (Kyushu Univ.), Koji Yamanaka (Mitsubishi Electric Corp.) MW2012-116 |
This is a report on 2012 IEEE MTT-S International Microwave Symposium held at Montreal, QC, CA, June 18-22, 2012. It co... [more] |
MW2012-116 pp.13-22 |
MWP, OPE, MW, EMT, EST, IEE-EMT [detail] |
2012-07-26 09:30 |
Hokkaido |
Hokkaido Univ. |
An S-Band 170W/70% Partially-Matched GaN HEMT Power Amplifier
-- Efficiency Increase by Harmonic Termination for GaN-on-Si Device -- Naoki Kosaka, Hiromitsu Uchida, Hifumi Noto, Koji Yamanaka, Masatoshi Nakayama, Yoshihito Hirano, Akira Inoue, Yoichi Nogami, Ko Kanaya (Mitsubishi Electric Corp.) MW2012-28 OPE2012-21 EST2012-10 MWP2012-9 |
[more] |
MW2012-28 OPE2012-21 EST2012-10 MWP2012-9 pp.7-10 |
MW |
2012-06-29 14:00 |
Gifu |
Gifu Univ. |
C-band 220W High Efficiency GaN Amplifier Hiroaki Maehara, Koji Yamanaka, Naoki Kosaka, Jun Nishihara, Keiichi Kawashima, Masatoshi Nakayama (Mitsubishi Electric) MW2012-22 |
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. Recen... [more] |
MW2012-22 pp.19-24 |
EST |
2012-06-01 15:45 |
Tokyo |
Aoyama Gakuin University(Aoyama Campus) |
A Basic Study on A Lossy Impedance-Matching Network with Directional Coupler and Reflection Circuit Hiromitsu Uchida, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.) EST2012-6 |
[more] |
EST2012-6 pp.33-38 |
MW |
2012-03-01 13:15 |
Saga |
Saga University |
An X-band GaN High-Power Amplifier with a Parallel-Resonant 2nd-Harmonic Input Terminating Network Hiromitsu Uchida, Hiroshi Otsuka, Koji Yamanaka, Hidetoshi Koyama, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric Corp.) MW2011-174 |
[more] |
MW2011-174 pp.35-40 |
MW |
2012-03-01 13:45 |
Saga |
Saga University |
How to improve efficiency of over 100W output power GaN High Power Amplifiers using Harmonic Termination Technique Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) MW2011-175 |
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at S-band is presented. Recen... [more] |
MW2011-175 pp.41-46 |
MW |
2012-03-01 16:15 |
Saga |
Saga University |
[Special Talk]
An Attendee Report on European Microwave Week 2011 Yasushi Horii (Kansai Univ.), Akimichi Hirota (Mitsubishi Electric), Chun-Ping Chen (Kanagawa Univ.), Kunihiro Kawai (NTT DOCOMO), Koji Yamanaka (Mitsubishi Electric), Ramesh Pokharel (Kyushu Univ.) MW2011-177 |
This is an attendee report on the international conference of European Microwave Week (EuMW) 2011, including a statistic... [more] |
MW2011-177 pp.53-60 |
MW |
2011-10-20 09:00 |
Tokyo |
The University of Electro-Communications |
X-Band 120W internally matched GaN amplifier in small package Hiroaki Maehara, Hiromitsu Uchida, Hiromitsu Utsumi, Jun Nishihara, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Melco) MW2011-85 |
In this paper, a small package internally matched GaN HEMT high power amplifier operating at X-band is presented. Radar ... [more] |
MW2011-85 pp.1-5 |
OPE, MW, MWP, EMT, EST, IEE-EMT [detail] |
2011-07-22 11:25 |
Hokkaido |
|
C-Ku band ultra broadband GaN MMIC amplifier with 20W output power Eigo Kuwata, Koji Yamanaka, Hidetoshi Koyama, Tasuku Kirikoshi, Masatoshi Nakayama, Yoshihito Hirano (Melco) MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 |
[more] |
MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 pp.119-123 |
EMCJ, MW, EST |
2011-05-26 14:35 |
Tokyo |
NICT |
L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) EMCJ2011-17 MW2011-14 EST2011-10 |
In this paper, a high power and high efficiency partially-impedance matched GaN FET operating at L-band is presented. Re... [more] |
EMCJ2011-17 MW2011-14 EST2011-10 pp.45-50 |
MW, ED |
2011-01-13 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Broadband High Efficiency Class-E GaN HEMT Amplifier Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) ED2010-179 MW2010-139 |
In this paper, a broadband high efficiency class-E GaN HEMT amplifier is presented. Recently, many over 100W output powe... [more] |
ED2010-179 MW2010-139 pp.23-28 |
MW |
2010-05-13 16:00 |
Hyogo |
University of Hyogo |
11W output power C-X band broadband high power balanced amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (MELCO) MW2010-17 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] |
MW2010-17 pp.17-22 |
EMCJ, MW, IEE-MAG |
2009-10-23 14:00 |
Iwate |
Iwate Univ. |
A Reflection-Absorptive Band-Rejection Filter with a Dual-Band Wilkinson Power Divider
-- An Introduction of a Synthesis Tool for Wilkinson Power Divider -- Hiromitsu Uchida, Koji Yamanaka, Kazuhisa Yamauchi, Akira Inoue, Yoshihito Hirano, Moriyasu Miyazaki (Mitsubishi Electric Corp.) EMCJ2009-70 MW2009-119 |
Harmonic-termination technique is often introduced to RF high-power amplifiers in order to boost its efficiency. At the ... [more] |
EMCJ2009-70 MW2009-119 pp.153-158 |
OPE, EMT, MW |
2009-07-31 09:50 |
Hokkaido |
Asahikawa Civic Culture Hall |
C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] |
MW2009-68 OPE2009-68 pp.205-209 |
MW, ED |
2009-01-14 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
design of broadband amplifier with consideration of output capacitance Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.) ED2008-200 MW2008-165 |
Recently, broadband amplifiers have become more important for ultra-wideband (UWB) radio communication systems and multi... [more] |
ED2008-200 MW2008-165 pp.11-15 |
MW |
2008-08-28 13:45 |
Osaka |
Osaka-Univ. (Toyonaka) |
S-band GaN HEMT Low Noise Amplifier with High Survivability Koji Yamanaka, Hidenori Yukawa, Akira Inoue (Mitsubishi Electric) MW2008-84 |
In this paper, an S-band GaN HEMT LNA, which uses a small discrete GaN HEMT chip to minimize the cost, is presented. It ... [more] |
MW2008-84 pp.31-36 |
MW |
2008-06-27 14:50 |
Aichi |
Toyohashi Univ. of Tech. |
Efficiency Enhancement of GaN HEMTs with Harmonic Tuning Technique Koji Yamanaka, Hifumi Noto, Makoto Kimura, Kazuhisa Yamauchi, Yoshitaka Kamo, Eigo Kuwata, Hiroshi Otsuka, Akira Inoue (Mitsubishi Electric) MW2008-44 |
In this paper, high efficiency operation of GaN HEMTs with harmonic tuning is presented. As power density of GaN HEMTs i... [more] |
MW2008-44 pp.69-74 |