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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2021-12-09 09:30 |
Online | Online | [Invited Talk]
Photoelectron beams from semiconductor photocathodes with negative electron affinity surfaces and their innovative applications Tomohiro Nishitani, Daiki Sato, Atsushi koizumi, Haruka Shikano, Yuta Arakawa, Shotaro Noda, Hokuto Iijima (PeS inc./Nagoya Univ.)  ED2021-37 |
[more] | ED2021-37 pp.1-6 |
| NC, MBE (Joint) |
2018-10-20 15:05 |
Miyagi | Tohoku Univ. | Analysis of heart rate variability time series data for finding the influence of work quality for call center agents Tomohiro Obara, Gen Hattori, Umata Ichiro (KDDI Research), Junichi Koizumi (OUJ/YNU) MBE2018-35 |
Nowadays the impact of mental load on work has been attracting public attention, and stress checks are required in work ... [more] | MBE2018-35 pp.43-46 |
| LQE, ED, CPM | 2014-11-28 15:35 |
Osaka | Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2014-95 CPM2014-152 LQE2014-123 |
Enhancement of Eu-related luminescence intensity in Eu,O-codoped GaN (GaN:Eu,O) was demonstrated by embedding a GaN:Eu,O... [more] | ED2014-95 CPM2014-152 LQE2014-123 pp.107-110 |
|
| CPM, LQE, ED | 2013-11-29 09:30 |
Osaka | OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112 |
We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and in... [more] | ED2013-77 CPM2013-136 LQE2013-112 pp.63-66 |
|
| CPM, LQE, ED | 2013-11-29 09:55 |
Osaka | Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-78 CPM2013-137 LQE2013-113 |
[more] | ED2013-78 CPM2013-137 LQE2013-113 pp.67-70 |
|
| QIT (2nd) |
2011-11-22 10:00 |
Osaka | Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) | Analysis of controlled-NOT gate by time-optimal quantum computation theory
-- result of a chain system -- Jun Koizumi, Tatsuhiko Koike (Keio Univ.) |
We investigate the way to realize controlled-NOT gate time-optimally by using fidelity-optimal quantum computation theor... [more] | |
| CPM | 2010-10-28 16:40 |
Nagano | Structure and electric properties of RF-sputtered p-type nickel oxide thin films Atsushi Nagata, Kazuo Uchida, Atsushi Koizumi, Hiroshi Ono, Shinji Nozaki (UEC) CPM2010-96 |
NiOx as a transparent oxide semiconductor has been known long to show an intrinsic p-type conductivity although most of ... [more] | CPM2010-96 pp.27-31 |
|
| ED, MW | 2008-01-17 11:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in reliability of InGaP/GaAs HBT's by ledge passivation Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148 |
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] | ED2007-217 MW2007-148 pp.61-66 |
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