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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2024-02-29
13:45		 Yamagata Yamagata University
(Primary: On-site, Secondary: Online)		 Effects of O doping on Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa (Hirosaki Univ.) CPM2023-105		 We have prepared silicon-, nitrogen- and oxygen-doped diamond-like carbon (Si–N–O-DLC) films via plasma-enhanced chemica... [more] CPM2023-105
pp.38-41
LQE, OPE, CPM, EMD, R 2023-08-24
15:50		 Miyagi Tohoku university
(Primary: On-site, Secondary: Online)		 [Invited Talk] Growth and applications of nitride semiconductors on h-BN
Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.) R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15		 We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15
pp.42-44
CPM 2023-02-28
11:30		 Tokyo Tokyo University of Technology
(Primary: On-site, Secondary: Online)		 Photovoltaic properties of boron carbide thin films prepared by magnetron sputtering using hydrogen gas
Tatsuya Nishida, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2022-94		  [more] CPM2022-94
pp.35-38
CPM 2022-08-04
16:15		 Hokkaido   Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering
Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Hirokazu Fukidome (Touhoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2022-15		 We have deposited amorphous boron carbide (B4C) films and hydrogenated amorphous B4C (B4C:H) films by RF magnetron sputt... [more] CPM2022-15
pp.14-17
CPM 2021-10-27
13:20		 Online Online Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2021-26		 We have deposited silicon and nitrogen doped diamond-like carbon (Si–N–DLC) films by radio frequency plasma-enhanced che... [more] CPM2021-26
pp.23-28
CPM 2020-10-29
15:10		 Online Online Hydrogen effects on the properties of BCN films deposited by magnetron sputtering
Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta (Hirosaki Univ.), Hirokazu Fukidome (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2020-17		  [more] CPM2020-17
pp.23-26
CPM 2019-11-07
15:00		 Fukui Fukui univ. Annealing effects on the properties of nitrogen doped DLC films
Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2019-46		 We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] CPM2019-46
pp.9-14
CPM, IEE-MAG 2018-11-02
14:25		 Niigata Machinaka campus Nagaoka Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52		 We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] CPM2018-52
pp.99-104
CPM 2018-08-09
14:30		 Aomori Hirosaki Univ. Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8		 We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and ... [more] CPM2018-8
pp.1-6
ED, LQE, CPM 2012-11-29
10:25		 Osaka Osaka City University Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94		 Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] ED2012-66 CPM2012-123 LQE2012-94
p.7
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