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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2020-10-29
Online Online Hydrogen effects on the properties of BCN films deposited by magnetron sputtering
Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta (Hirosaki Univ.), Hirokazu Fukidome (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2020-17
 [more] CPM2020-17
CPM 2019-11-07
Fukui Fukui univ. Annealing effects on the properties of nitrogen doped DLC films
Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2019-46
We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] CPM2019-46
CPM, IEE-MAG 2018-11-02
Niigata Machinaka campus Nagaoka Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] CPM2018-52
CPM 2018-08-09
Aomori Hirosaki Univ. Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8
We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and ... [more] CPM2018-8
ED, LQE, CPM 2012-11-29
Osaka Osaka City University Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94
Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] ED2012-66 CPM2012-123 LQE2012-94
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