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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, R, ED 2007-11-16
14:55		 Osaka   Reliability Study of AlGaN/GaN HEMTs Device
Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) R2007-50 ED2007-183 SDM2007-218		 AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power de... [more] R2007-50 ED2007-183 SDM2007-218
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