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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2015-04-16 13:50 |
Nagano |
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[Invited Lecture]
40 nm Dual-port and Two-port SRAMs for Automotive MCU Applications under the Wide Temperature Range of -40 to 170℃ with Test Screening Against Write Disturb Issues Yoshisato Yokoyama, Yuichiro Ishii, Tatsuya Fukuda, Yoshiki Tsujihashi, Atsushi Miyanishi (Renesas Electronics), Shinobu Asayama, Keiichi Maekawa, Kazutoshi Shiba (Renesas Semiconductor Manufacturing Corporation), Koji Nii (Renesas Electronics) ICD2015-3 |
(To be available after the conference date) [more] |
ICD2015-3 pp.9-14 |
ICD, SDM |
2014-08-05 10:50 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
40nm ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa (Renesas) SDM2014-74 ICD2014-43 |
(To be available after the conference date) [more] |
SDM2014-74 ICD2014-43 pp.65-70 |
SDM, ICD |
2011-08-26 15:05 |
Toyama |
Toyama kenminkaikan |
A 28-nm dual-port SRAM macro with active bitline equalizing circuitry against write disturb issue Yuichiro Ishii, Hidehiro Fujiwara, Koji Nii (Renesas Electronics), Hideo Chigasaki, Osamu Kuromiya, Tsukasa Saiki (Renesas Design), Atsushi Miyanishi, Yuji Kihara (Renesas Electronics) SDM2011-92 ICD2011-60 |
We propose circuit techniques for an 8T dual-port (DP) SRAM to improve its minimum operating voltage (Vddmin). Active bi... [more] |
SDM2011-92 ICD2011-60 pp.109-114 |
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