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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW |
2017-05-18 15:25 |
Osaka |
Osaka Univ. (Seminar Room1, Osaka Univ. Kaikan) |
A Multi-layered Substrate Integrated Dual-Input Ring Termination for High Power Handling Capability Takeshi Yuasa, Hidenori Ishibashi, Akihiro Ando, Hironobu Shibata, Ko Kurata, Tetsu Owada, Naofumi Yoneda, Moriyasu Miyazaki (Mitsubishi Electric Co.) MW2017-11 |
[more] |
MW2017-11 pp.19-23 |
MW, OPE, EMT, MWP, EST, IEE-EMT [detail] |
2014-07-17 10:25 |
Hokkaido |
Muroran Inst. of Tech. |
X Band High Power and High Efficiency Amplifier with 2nd Harmoics rejection circuits Eigo Kuwata, Koji Yamanaka, Shuichi Sakata, Hidetoshi Koyama, Yoshitaka Kamo, Akihiro Ando, Kazuhiko Nakahara, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-54 OPE2014-23 EST2014-15 MWP2014-12 |
[more] |
MW2014-54 OPE2014-23 EST2014-15 MWP2014-12 pp.7-10 |
MW, ED |
2009-01-16 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications) ED2008-222 MW2008-187 |
This paper describes a high-efficiency Class-F GaN HEMT power amplifier linearized by a diode predistorter. The series d... [more] |
ED2008-222 MW2008-187 pp.135-139 |
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