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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 09:30 |
Online | Online | [Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST)  SDM2020-6 ICD2020-6 |
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semicon... [more] | SDM2020-6 ICD2020-6 pp.25-30 |
| ICD, SDM | 2014-08-04 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36 |
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] | SDM2014-67 ICD2014-36 pp.29-34 |
| ED | 2013-08-09 09:25 |
Toyama | University of Toyama | Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45 |
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] | ED2013-45 pp.37-42 |
| SDM | 2012-11-16 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models -- Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111 |
Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device model... [more] | SDM2012-111 pp.63-68 |
| SDM | 2011-07-04 10:40 |
Aichi | VBL, Nagoya Univ. | Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy Shinya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima (Yokohama Nat'l Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shoichi Ogata (Yokohama Nat'l Univ.), Tetsuji Yasuda (AIST), Masatoshi Tanaka (Yokohama Nat'l Univ.) SDM2011-54 |
The initial oxidation on high-index silicon surfaces with (113) and (120) orientations has been investigated by real-tim... [more] | SDM2011-54 pp.23-27 |
| SDM | 2010-06-22 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42 |
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] | SDM2010-42 pp.49-54 |
| SDM | 2008-06-10 09:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49 |
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] | SDM2008-49 pp.41-46 |
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