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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2023-04-22 11:20 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Optimal Tantalum Nitride Composition Investigation for Source/Drain Electrodes in c-Axis Aligned Crystalline In-Ga-Zn Oxide FET Jesper Berglund Eklind (UU), Shun Ohta, Rena Wakasa, Satoru Saito, Naoki Okuno, Kenta Takatsu, Yuichi Sato, Tomoya Takeshita, Hiroki Komagata, Yumiko Noda, Toshihiko Takeuchi, Tatsuya Onuki, Hitoshi Kunitake, Shunpei Yamazaki (SEL)  SDM2023-11 OME2023-11 |
The characteristics of an oxide semiconductor field-effect transistor (OSFET) using c-axis aligned crystalline In-Ga-Zn-... [more] | SDM2023-11 OME2023-11 pp.37-43 |
| ICD | 2023-04-10 09:30 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Lecture]
A c-axis aligned crystalline IGZO FET and a 0.06-um2 HfO2-based capacitor 1T1C FeRAM with high voltage tolerance and 10-ns write time Masami Endo, Numata Shiyuu, Ohshima Kazuaki, Egi Yuji, Isaka Fumito, Ohno Toshikazu, Tezuka Sachiaki, Hamada Toshiki, Furutani Kazuma, Tsuda Kazuki, Matsuzaki Takanori, Onuki Tatsuya, Murakawa Tsutomu, Kunitake Hitoshi (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Yamazaki Shunpei (SEL) |
[more] | |
| SDM | 2023-01-30 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80 |
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors. A da... [more] |
SDM2022-80 pp.5-8 |
| ICD | 2017-04-21 13:50 |
Tokyo | [Invited Lecture]
Embedded Memory and ARM Cortex-M0 Core Using 60-nm CAAC-IGZO FET Integrated with 65-nm Si CMOS Tatsuya Onuki, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato (Semiconductor Energy Laboratory), T R Yew, Chen Bin Lin, J Y Wu, Chi Chang Shuai, Shao Hui Wu (United Microelectronics Corporation), James Myers (ARM), Klaus Doppler (Nokia Technologies), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (Semiconductor Energy Laboratory) ICD2017-17 |
[more] | ICD2017-17 pp.89-93 |
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| ICD | 2015-04-17 10:50 |
Nagano | [Invited Talk]
A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto (SEL), Masahiro Fujita (The Univ. of Tokyo), Jun Koyama, Shunpei Yamazaki (SEL) ICD2015-9 |
A 128kbit 4bit/cell memory is achieved by a nonvolatile oxide semiconductor RAM test chip with a c-axis aligned crystall... [more] | ICD2015-9 pp.39-44 |
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