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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2012-11-30
11:00		 Osaka Osaka City University Fabrication of red light emitting diode with GaN:Eu,Mg active layer
Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech) ED2012-80 CPM2012-137 LQE2012-108		 Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] ED2012-80 CPM2012-137 LQE2012-108
pp.65-70
LQE, ED, CPM 2011-11-18
10:45		 Kyoto Katsura Hall，Kyoto Univ. Effect of Mg co-doping on optical characteristics of GaN:Eu
Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-91 CPM2011-140 LQE2011-114		 Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] ED2011-91 CPM2011-140 LQE2011-114
pp.93-97
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