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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2017-10-25 16:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.)  SDM2017-54 |
The grain growth of a pentacene thin film, which is a well-known p-type organic semiconductor, is sensitive to underneat... [more] | SDM2017-54 pp.25-30 |
| OME, SDM | 2017-04-20 16:45 |
Kagoshima | Tatsugochou Shougaigakushuu Center | A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4 |
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] | SDM2017-4 OME2017-4 pp.15-18 |
| SDM | 2016-10-27 10:25 |
Miyagi | Niche, Tohoku Univ. | A Study on Pentacene Film Formation on SiO2 with Wet Process for Bottom-Contact Type OFETs Yasutaka Maeda, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2016-74 |
The growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneath mate... [more] | SDM2016-74 pp.31-34 |
| SDM | 2016-10-27 11:15 |
Miyagi | Niche, Tohoku Univ. | Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76 |
MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] | SDM2016-76 pp.39-44 |
| SDM, OME | 2016-04-08 12:00 |
Okinawa | Okinawa Prefectural Museum & Art Museum | [Invited Talk]
OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech) SDM2016-3 OME2016-3 |
High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (O... [more] | SDM2016-3 OME2016-3 pp.11-15 |
| SDM | 2015-10-29 14:50 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process by annealing Ar/H2ambient Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-72 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2015-72 pp.7-12 |
| SDM | 2015-10-30 13:50 |
Miyagi | Niche, Tohoku Univ. | A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.) SDM2015-80 |
The grain growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneat... [more] | SDM2015-80 pp.49-52 |
| SDM | 2015-10-30 15:00 |
Miyagi | Niche, Tohoku Univ. | Investigation of stacked HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-82 |
In this paper, the effects of HfN1.0 interfacial layer (IL) on the electrical characteristics of HfN1.3 layer formed by ... [more] | SDM2015-82 pp.57-62 |
| SDM | 2014-10-16 15:20 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process utilizing atmospheric annealing system Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2014-86 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2014-86 pp.13-17 |
| SDM | 2014-10-16 16:00 |
Miyagi | Niche, Tohoku Univ. | Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87 |
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] | SDM2014-87 pp.19-22 |
| SDM | 2013-10-17 14:50 |
Miyagi | Niche, Tohoku Univ. | Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-89 |
[more] | SDM2013-89 pp.5-9 |
| SDM | 2013-10-17 15:40 |
Miyagi | Niche, Tohoku Univ. | Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-90 |
[more] | SDM2013-90 pp.11-14 |
| SDM | 2013-10-18 10:00 |
Miyagi | Niche, Tohoku Univ. | A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93 |
It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrog... [more] | SDM2013-93 pp.27-31 |
| SDM | 2012-10-26 13:00 |
Miyagi | Tohoku Univ. (Niche) | Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-95 |
[more] | SDM2012-95 pp.33-36 |
| SDM | 2012-10-26 13:25 |
Miyagi | Tohoku Univ. (Niche) | Effect of silicon surface roughness on MOSFET performance with ultra-thin HfON gate insulator formed by ECR sputtering Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-96 |
[more] | SDM2012-96 pp.37-40 |
| SDM, ED (Workshop) |
2012-06-28 10:15 |
Okinawa | Okinawa Seinen-kaikan | Effect of Si surface roughness on EOT reduction for HfON gate insulator formed by ECR plasma oxidation of HfN Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Tech) |
[more] | |
| SDM | 2011-10-20 15:20 |
Miyagi | Tohoku Univ. (Niche) | Effect of Si surface roughness on electrical characteristics of HfON gate insulator Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-100 |
In this paper, the effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by the ele... [more] | SDM2011-100 pp.17-20 |
| SDM | 2011-10-21 11:15 |
Miyagi | Tohoku Univ. (Niche) | A study on contact resistivity lowering of PtSi by alloying with low work function metals Shun-ichiro Ohmi (Tokyo Tech) SDM2011-107 |
[more] | SDM2011-107 pp.59-62 |
| SDM | 2011-10-21 11:40 |
Miyagi | Tohoku Univ. (Niche) | Effect of peripheral region on the electrical properties of pentacene-based organic field-effect transistors with HfON gate insulator Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-108 |
[more] | SDM2011-108 pp.63-66 |
| SDM | 2010-10-21 15:30 |
Miyagi | Tohoku University | Mechanism of Work Function Modulation of PtSi Alloying with Yb Jumpei Ishikawa, Jun Gao, Shun-ichiro Ohmi (Tokyo Tech) SDM2010-154 |
The work function modulation of PtSi by alloying with Yb to achieve ultra low contact resistance for advanced CMOS was i... [more] | SDM2010-154 pp.13-16 |
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