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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, SDM | 2024-04-20 16:50 |
Kagoshima | AMA Home Plaza | [Invited Talk]
ReRAM/OFET integration process utilizing LaBxNy/N-doped LaB6 stacked structure Shun-ichiro Ohmi, Jiaang Zhao (Tokyo Tech)  SDM2024-7 OME2024-7 |
[more] | SDM2024-7 OME2024-7 pp.24-27 |
| SDM | 2023-10-13 17:00 |
Miyagi | Niche, Tohoku Univ. | A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) SDM2023-61 |
LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] | SDM2023-61 pp.46-49 |
| SDM | 2022-10-19 11:35 |
Online | Online | A study on threshold voltage control of MFSFET with ultrathin ferroelectric nondoped HfO2 gate insulator for analog memory applications Joong-Won Shin, Masakazu Tanuma, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-56 |
[more] | SDM2022-56 pp.9-12 |
| SDM | 2022-10-19 13:15 |
Online | Online | [Invited Talk]
Fabrication of monolayer h-BN/LaB6 heterostructure using thermally aggregation method and its evaluation Katsumi Nagaoka, Takashi Aizawa, Shun-ichiro Ohmi (NIMS) SDM2022-57 |
[more] | SDM2022-57 pp.13-15 |
| SDM | 2022-10-19 15:15 |
Online | Online | [Invited Talk]
Fabrication of organic ferroelectric transistors using paper substrates and application to organic solar cells Park Byung Eun (University of Seoul), Shun-ichiro Ohmi (TIT) SDM2022-60 |
[more] | SDM2022-60 pp.24-27 |
| SDM | 2022-10-19 16:05 |
Online | Online | A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2022-61 |
[more] | SDM2022-61 pp.28-33 |
| SDM | 2022-10-19 17:20 |
Online | Online | A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63 |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] | SDM2022-63 pp.38-42 |
| SDM | 2021-10-21 13:00 |
Online | Online | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46 |
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] | SDM2021-46 pp.8-11 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| SDM | 2021-10-21 13:50 |
Online | Online | A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] | SDM2021-48 pp.16-19 |
| SDM | 2020-10-22 13:00 |
Online | Online | Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) SDM2020-16 |
[more] | SDM2020-16 pp.12-15 |
| SDM | 2020-10-22 13:30 |
Online | Online | A two-step wet etching process for the integration of PdEr/HfO2 gate stack structure on the gate-first Schottky barrier MOSFET Rengie Mark D. Mailig, Yuichiro Aruga, Shun-ichiro Ohmi (Tokyo Tech) SDM2020-17 |
[more] | SDM2020-17 pp.16-19 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM | 2019-10-23 14:50 |
Miyagi | Niche, Tohoku Univ. | The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-55 |
[more] | SDM2019-55 pp.11-15 |
| SDM | 2019-10-23 15:40 |
Miyagi | Niche, Tohoku Univ. | Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] | SDM2019-56 pp.17-20 |
| SDM | 2019-10-23 16:10 |
Miyagi | Niche, Tohoku Univ. | A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer Jooyoung Pyo, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-57 |
[more] | SDM2019-57 pp.21-24 |
| SDM | 2019-10-23 16:40 |
Miyagi | Niche, Tohoku Univ. | Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers Yusuke Horiuchi, Jooyoung Pyo, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-58 |
[more] | SDM2019-58 pp.25-28 |
| SDM | 2018-10-17 16:05 |
Miyagi | Niche, Tohoku Univ. | Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55 |
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] | SDM2018-55 pp.15-19 |
| SDM | 2018-10-18 13:00 |
Miyagi | Niche, Tohoku Univ. | Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) SDM2018-60 |
We have reported that the effect of nitrogen-doped LaB6 interfacial layer on the improvement of pentacene-based device c... [more] | SDM2018-60 pp.41-45 |
| SDM | 2017-10-25 15:20 |
Miyagi | Niche, Tohoku Univ. | Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52 |
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] | SDM2017-52 pp.15-19 |
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