A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator ○Eun-Ki Hong・Shun-ichiro Ohmi(Tokyo Tech.) SDM2022-61
A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications ○Eun-Ki Hong・Shun-ichiro Ohmi(Tokyo Tech.) SDM2021-46