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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2011-01-14
11:25
Tokyo Kikai-Shinko-Kaikan Bldg. Developing GaN HEMTs for Ka-Band with 20W
Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2010-186 MW2010-146
(To be available after the conference date) [more] ED2010-186 MW2010-146
pp.61-64
EMCJ, MW, IEE-MAG 2009-10-22
15:00
Iwate Iwate Univ. S-band, Internally Matched Class-E GaN HEMT Amplifier
Yukio Takahashi, Takashi Higuchi, Kazutoshi Masuda (Toshiba Corp.) EMCJ2009-50 MW2009-99
A Class-E amplifier is designed at S-band with our inhouse developed GaN HEMTs. The Class-E amplifier generally describe... [more] EMCJ2009-50 MW2009-99
pp.37-40
CPM, ED, LQE 2007-10-12
12:05
Fukui Fukui Univ. Ku-band AlGaN/GaN HEMTs with 50W Output Power
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] ED2007-172 CPM2007-98 LQE2007-73
pp.81-84
MW, ED 2007-01-19
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. Over 80W Output Power X-band AlGaN/GaN HEMT
Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-238 MW2006-191
pp.209-212
ED, CPM, LQE 2006-10-05
13:00
Kyoto   X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-152 CPM2006-89 LQE2006-56
pp.1-5
LQE, ED, CPM 2005-10-13
13:30
Shiga Ritsumeikan Univ. C-band AlGaN/GaN HEMTs with 170W Output Power
Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba)
As a promising candidate for next generation microwave power devices, AlGaN/GaN HEMTs have attracted much research inter... [more] ED2005-126 CPM2005-113 LQE2005-53
pp.39-42
 Results 1 - 6 of 6  /   
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