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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2021-05-27
13:45
Online Online Bandgap control for Ge epitaxial layer on Si using sub-micron wire structure
Manami Shimokawa, Shuhei Sonoi, Riku Katamawari, Yasuhiko Ishikawa (TUT) ED2021-2 CPM2021-2 SDM2021-13
Ge epitaxial layer on Si has been used in silicon photonics as a material for photodetectors and optical intensity modul... [more] ED2021-2 CPM2021-2 SDM2021-13
pp.7-10
SDM, ED, CPM 2019-05-16
13:25
Shizuoka Shizuoka Univ. (Hamamatsu) Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si
Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-11 CPM2019-2 SDM2019-9
Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-... [more] ED2019-11 CPM2019-2 SDM2019-9
pp.5-8
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