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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
16:10		 Aichi VBL, Nagoya Univ. Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing
Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53		 The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] SDM2015-53
pp.81-86
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