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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, CPM, ED |
2020-11-26 14:10 |
Online |
Online |
Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples -- Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2020-9 CPM2020-30 LQE2020-60 |
[more] |
ED2020-9 CPM2020-30 LQE2020-60 pp.33-36 |
ED, CPM, SDM |
2018-05-24 15:25 |
Aichi |
Toyohashi Univ. of Tech. (VBL) |
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13 |
The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform ... [more] |
ED2018-18 CPM2018-5 SDM2018-13 pp.19-22 |
LQE, ED, CPM |
2011-11-17 12:55 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) ED2011-77 CPM2011-126 LQE2011-100 |
In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppre... [more] |
ED2011-77 CPM2011-126 LQE2011-100 pp.19-24 |
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