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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-02-05
15:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams
Akira Uedono (Tsukuba Univ.), Naoya Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, Masaki Yoshimaru (STARC), Nagayasu Oshima, Toshiyuki Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology) SDM2009-190		 Defects in SiOCH/Cu damascene structures were probed using monoenergetic positron beams. Doppler broadening spectra of t... [more] SDM2009-190
pp.49-52
SDM 2009-06-19
16:00		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric
Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) SDM2009-40		 The memory properties of nano-dot-type floating gate memories with Co bio-nanodots (Co-BNDs) embedded in HfO2 layer were... [more] SDM2009-40
pp.77-80
SDM 2008-06-10
14:35		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Bio-nano dot floating gate memory with High-k films
Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57		 The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capaci... [more] SDM2008-57
pp.89-92
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