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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2023-04-10 09:30 |
Kanagawa |
(Primary: On-site, Secondary: Online) |
[Invited Lecture]
A c-axis aligned crystalline IGZO FET and a 0.06-um2 HfO2-based capacitor 1T1C FeRAM with high voltage tolerance and 10-ns write time Masami Endo, Numata Shiyuu, Ohshima Kazuaki, Egi Yuji, Isaka Fumito, Ohno Toshikazu, Tezuka Sachiaki, Hamada Toshiki, Furutani Kazuma, Tsuda Kazuki, Matsuzaki Takanori, Onuki Tatsuya, Murakawa Tsutomu, Kunitake Hitoshi (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Yamazaki Shunpei (SEL) |
[more] |
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ICD |
2023-04-11 13:20 |
Kanagawa |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa (SEL), Toru Nakura (Fukuoka Univ.), Shunpei Yamazaki (SEL) ICD2023-10 |
We have achieved a small-area, low-power AI chip that enables inference corresponding to multiple neural networks using ... [more] |
ICD2023-10 pp.18-23 |
SDM |
2023-01-30 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
[Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80 |
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors.
A da... [more] |
SDM2022-80 pp.5-8 |
ICD |
2018-04-20 13:50 |
Tokyo |
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[Invited Talk]
Memory LSI using crystalline oxide semiconductor FET Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda (SEL), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (SEL) ICD2018-12 |
FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-sta... [more] |
ICD2018-12 pp.47-52 |
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