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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2023-04-10
09:30
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Lecture] A c-axis aligned crystalline IGZO FET and a 0.06-um2 HfO2-based capacitor 1T1C FeRAM with high voltage tolerance and 10-ns write time
Masami Endo, Numata Shiyuu, Ohshima Kazuaki, Egi Yuji, Isaka Fumito, Ohno Toshikazu, Tezuka Sachiaki, Hamada Toshiki, Furutani Kazuma, Tsuda Kazuki, Matsuzaki Takanori, Onuki Tatsuya, Murakawa Tsutomu, Kunitake Hitoshi (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Yamazaki Shunpei (SEL)
 [more]
ICD 2023-04-11
13:20
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Talk] Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating
Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa (SEL), Toru Nakura (Fukuoka Univ.), Shunpei Yamazaki (SEL) ICD2023-10
We have achieved a small-area, low-power AI chip that enables inference corresponding to multiple neural networks using ... [more] ICD2023-10
pp.18-23
SDM 2023-01-30
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors.
A da... [more]
SDM2022-80
pp.5-8
ICD 2018-04-20
13:50
Tokyo   [Invited Talk] Memory LSI using crystalline oxide semiconductor FET
Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda (SEL), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (SEL) ICD2018-12
FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-sta... [more] ICD2018-12
pp.47-52
 Results 1 - 4 of 4  /   
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