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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2023-04-22 15:35 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Double gate thin-film transistors on glass substrates Akito Hara, Kaisei Nomura, Akihisa Nagayoshi, Masahide Nitta, Syo Suzuki, Yuto Ito (Tohoku Gakuin Univ.)  SDM2023-16 OME2023-16 |
The aim of our research is to realize high performance and functional thin-film transistors (TFTs) on glass substrates. ... [more] | SDM2023-16 OME2023-16 pp.59-62 |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 11:00 |
Kyoto | Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77 |
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] | EID2018-4 SDM2018-77 pp.1-4 |
|
| SDM, OME | 2018-04-07 11:20 |
Okinawa | Okinawaken Seinen Kaikan | [Invited Talk]
High Performance and Functional Group-Ⅳ Thin-Film Transistors Akito Hara, Hiroki Utsumi, Naoki Nishiguchi, Ryo Miyazaki (Tohoku Gakuin Univ.) SDM2018-5 OME2018-5 |
We have fabricated self-aligned planar double-gate (DG) or self-aligned planar four-terminal (4T) polycrystalline german... [more] | SDM2018-5 OME2018-5 pp.19-24 |
| SDM, EID | 2017-12-22 15:30 |
Kyoto | Kyoto University | Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85 |
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] | EID2017-24 SDM2017-85 pp.67-70 |
| OME, SDM | 2017-04-20 13:00 |
Kagoshima | Tatsugochou Shougaigakushuu Center | Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1 |
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] | SDM2017-1 OME2017-1 pp.1-4 |
| SDM, EID | 2016-12-12 14:00 |
Nara | NAIST | CMOS Inverter Consisting of Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) EID2016-19 SDM2016-100 |
[more] | EID2016-19 SDM2016-100 pp.45-48 |
| SDM, OME | 2016-04-09 11:15 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15 |
Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin fil... [more] | SDM2016-15 OME2016-15 pp.61-65 |
| EID, SDM | 2015-12-14 15:00 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Self-Aligned Metal Double Gate Low-Temperature Poly-Ge TFT with Thin Channel Layer on a Glass Substrate Yuya Nishimura, Akito Hara (Tohoku Gakuin Univ.) EID2015-19 SDM2015-102 |
[more] | EID2015-19 SDM2015-102 pp.43-47 |
| OME, SDM | 2015-04-30 14:15 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Self-Aligned Four-Terminal Planar Metal Double-Gate CLC LT Poly-Si TFTs on Glass Substrate Hiroki Ohsawa, Shun Sasaki, Akito Hara (Tohoku Gakuin Univ.) SDM2015-16 OME2015-16 |
[more] | SDM2015-16 OME2015-16 pp.63-66 |
| SDM, EID | 2014-12-12 13:30 |
Kyoto | Kyoto University | Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] | EID2014-23 SDM2014-118 pp.51-54 |
| SDM, OME | 2014-04-11 09:00 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
High performance LT poly-Si TFTs on glass substrate by using lateral large grained thin poly-Si film Akito Hara, Shinya Kamo, Shun Sasaki, Tatsuya Meguro (Tohoku Gakuin Univ.), Tadashi Sato (Hiroshima Univ.), Kuninori Kitahara (Shimane Univ.) SDM2014-10 OME2014-10 |
[more] | SDM2014-10 OME2014-10 pp.39-44 |
| SDM | 2013-12-13 11:40 |
Nara | NAIST | Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) SDM2013-124 |
A high-k gate dielectric is a technology booster for enhancing the performance of low-temperature (LT) polycrystalline-s... [more] | SDM2013-124 pp.49-53 |
| SDM, OME | 2012-04-27 15:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Growth of Silicon and Silicon-Germanium Thin Films on Glass Substrates by Continuous-Wave Laser Lateral Crystallization Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2012-5 OME2012-5 |
Flow-shaped growth of Si and SiGe thin films on glass substrate was achieved by continuous wave laser lateral crystalliz... [more] | SDM2012-5 OME2012-5 pp.21-26 |
| SDM, OME | 2012-04-27 16:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9 |
A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si ... [more] | SDM2012-9 OME2012-9 pp.41-44 |
| SDM | 2010-12-17 16:05 |
Kyoto | Kyoto Univ. (Katsura) | Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate Yasunori Okabe, Kenji Kondo (Tohoku Gakuin Univ.), Kenta Hirose, Junki Suzuki, Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2010-199 |
It is recognized that field-effect mobility of TFTs increases with grain size. We reported previously that it is possibl... [more] | SDM2010-199 pp.79-82 |
| SDM, OME | 2010-04-23 10:40 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Laser-activated Top-gate μc-Si:H TFTs Akito Hara, Jun Shibuya, Tadashi Sato (Tohoku Gakuin Univ.), Kuninori Kitahara (Shimane Univ.) SDM2010-2 OME2010-2 |
The aim of this research is to realize the monolithic integration of top-gate (TG) hydrogenated microcrystalline-silicon... [more] | SDM2010-2 OME2010-2 pp.5-8 |
| SDM | 2009-12-04 14:30 |
Nara | NAIST | Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.) SDM2009-163 |
Gettering of metal impurities in thin poly-Si films is one of the key techniques for realizing high-performance, high-re... [more] | SDM2009-163 pp.63-65 |
| SDM | 2007-12-14 13:50 |
Nara | Nara Institute Science and Technology | Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) SDM2007-229 |
We succeeded in the observation of dislocation motion in a thin Si1-xGex film (thickness = 56 nm and x = 0.24) on a Si s... [more] | SDM2007-229 pp.31-34 |
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