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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-26
13:30		 Online Online High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts
Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58		 Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] ED2020-7 CPM2020-28 LQE2020-58
pp.25-28
CPM, LQE, ED 2019-11-21
15:30		 Shizuoka Shizuoka Univ. (Hamamatsu) Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN
Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88		 Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorgan... [more] ED2019-45 CPM2019-64 LQE2019-88
pp.53-56
LQE, CPM, ED 2017-12-01
09:40		 Aichi Nagoya Inst. tech. A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition
Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-57 CPM2017-100 LQE2017-70		 Two kinds of substrates, sapphire and AlN/sapphire tem-plate (AlN template), were used for the growth of InGaN/GaN multi... [more] ED2017-57 CPM2017-100 LQE2017-70
pp.39-44
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