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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2019-06-21 11:00 |
Aichi |
Nagoya Univ. VBL3F |
Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures Takuji Hosoi, Kidist Moges (Osaka Univ.), Mitsuru Sometani (AIST), Takayoshi Shimura (Osaka Univ.), Shinsuke Harada (AIST), Heiji Watanabe (Osaka Univ.) SDM2019-25 |
[more] |
SDM2019-25 pp.1-4 |
SDM |
2013-06-18 17:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] |
SDM2013-64 pp.101-105 |
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