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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 24 of 24 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2007-06-25
15:30
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.)
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
ED, SDM 2007-06-25
15:55
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Analysis of plasma etching damages in GaN by excess carrier lifetime measurements
Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.)
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more]
SDM, ED, CPM 2007-05-24
14:50
Shizuoka Shizuoka Univ. Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.)
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more]
SDM, ED, CPM 2007-05-25
11:20
Shizuoka Shizuoka Univ. Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.)
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
 Results 21 - 24 of 24 [Previous]  /   
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