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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 24  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2017-05-26
09:55
Aichi VBL, Nagoya University Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18
Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] ED2017-24 CPM2017-10 SDM2017-18
pp.51-54
SDM, ED, CPM 2017-05-26
10:20
Aichi VBL, Nagoya University Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19
 [more] ED2017-25 CPM2017-11 SDM2017-19
pp.55-58
ED, CPM, SDM 2015-05-29
09:55
Aichi Venture Business Laboratory, Toyohashi University of Technology Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] ED2015-30 CPM2015-15 SDM2015-32
pp.71-76
CPM, ED, SDM 2014-05-29
13:20
Aichi   Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations
Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36
Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] ED2014-38 CPM2014-21 SDM2014-36
pp.101-104
CPM, ED, SDM 2014-05-29
13:40
Aichi   Microwave reflectance from SiC in the high injection condition -- Toward accurate evaluation of the carrier lifetime --
Masashi Kato, Yuto Mori, Masaya Ichimura (NITech) ED2014-39 CPM2014-22 SDM2014-37
 [more] ED2014-39 CPM2014-22 SDM2014-37
pp.105-108
SDM, ED, CPM 2013-05-16
13:30
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes
Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23
For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device pe... [more] ED2013-16 CPM2013-1 SDM2013-23
pp.1-6
SDM, ED, CPM 2013-05-16
13:55
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Identification of defect structures forming the deep levels in 4H-SiC
Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24
(To be available after the conference date) [more] ED2013-17 CPM2013-2 SDM2013-24
pp.7-12
SDM, ED, CPM 2013-05-17
14:55
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Evaluation of the carrier lifetime of SiC for high-efficiency hydrogen generation
Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2013-33 CPM2013-18 SDM2013-40
The hydrogen generation by the electrolysis of water with using sunlight attracts an attention for as a next energy tech... [more] ED2013-33 CPM2013-18 SDM2013-40
pp.93-98
SDM, ED 2013-02-27
15:00
Hokkaido Hokkaido Univ. possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation
Hiromu Sakakibara, Koji Wada, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-131 SDM2012-160
 [more] ED2012-131 SDM2012-160
pp.19-24
EA, SP, SIP 2012-05-24
14:10
Osaka Osaka Univ. Nakanoshima Center Performance improvement of the analog ANC circuit for a duct by addition of an all-pass filter
Tatsuki Hyodo, Gaku Asakura, Kiwamu Tsukada, Masashi Kato (NIT) EA2012-12 SIP2012-12 SP2012-12
Active noise control (ANC) has been known as a way to decrease low frequency noise in a duct. So far, we have developed ... [more] EA2012-12 SIP2012-12 SP2012-12
pp.65-69
ED, SDM, CPM 2012-05-18
11:15
Aichi VBL, Toyohashi Univ. of Technol. Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] ED2012-31 CPM2012-15 SDM2012-33
pp.67-72
CPM, SDM, ED 2011-05-19
10:25
Aichi Nagoya Univ. (VBL) Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers
Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17
To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] ED2011-4 CPM2011-11 SDM2011-17
pp.15-20
CPM, SDM, ED 2011-05-19
10:50
Aichi Nagoya Univ. (VBL) Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer
Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18
3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is dif... [more] ED2011-5 CPM2011-12 SDM2011-18
pp.21-26
CPM, SDM, ED 2011-05-19
11:15
Aichi Nagoya Univ. (VBL) Characterization of SiC photoelectrochemical properties for water splitting
Tomonari Yasuda, Masashi Kato, Masaya Ichimura (NIT) ED2011-6 CPM2011-13 SDM2011-19
SiC is chemically stable material, and strong against corrosion with electrobath. In addition, because a part of polytyp... [more] ED2011-6 CPM2011-13 SDM2011-19
pp.27-31
CPM, SDM, ED 2011-05-19
11:40
Aichi Nagoya Univ. (VBL) Improvement of n-type 4H-SiC Schottky diode characteristics using passivation of defect by anodic oxidation.
Masaya Kimura, Masashi Kato, Masaya Ichimura (NIT) ED2011-7 CPM2011-14 SDM2011-20
 [more] ED2011-7 CPM2011-14 SDM2011-20
pp.33-38
EA, SIP, SP 2009-05-28
16:00
Hyogo   Active noise control in a duct by an analog neural network circuit
Masashi Kato, Koji Onoda, Toshihiro Tanaka (Nagoya Inst. of Tech.) EA2009-6 SIP2009-6 SP2009-11
Although active noise control (ANC) in acoustic field of ducts has been applied with digital signal processing, the ANC ... [more] EA2009-6 SIP2009-6 SP2009-11
pp.29-33
SDM, ED 2008-07-11
15:35
Hokkaido Kaderu2・7 Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition
Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-108 SDM2008-127
4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers.However it ... [more] ED2008-108 SDM2008-127
pp.357-361
CPM, ED, SDM 2008-05-16
14:40
Aichi Nagoya Institute of Technology Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition
Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers.However it is reported... [more] ED2008-19 CPM2008-27 SDM2008-39
pp.89-94
CPM, ED, SDM 2008-05-16
15:05
Aichi Nagoya Institute of Technology Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method
Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40
Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] ED2008-20 CPM2008-28 SDM2008-40
pp.95-100
CPM, ED, SDM 2008-05-16
15:30
Aichi Nagoya Institute of Technology Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method
Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41
We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and curre... [more] ED2008-21 CPM2008-29 SDM2008-41
pp.101-106
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