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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2019-11-14
16:40
Okinawa Minami Daido Villa. Tamokuteki Koryu Center 2.5-10 GHz GaN MMIC HPA utilizing distributed amplifier with band-pass filter configuration
Jun Kamioka, Masatake Hangai, Shinichi Miwa, Yoshitaka Kamo, Shintaro Shinjo (Mitsubishi Electric) MW2019-108
2.5-10 GHz GaN MMIC HPA utilizing distributed amplifier with band-pass filter configuration and its design method are re... [more] MW2019-108
pp.47-51
EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] 2018-07-19
15:00
Hokkaido   A 26-W X-band high efficiency GaN MMIC power amplifier with compact spurious suppression filters
Jun Kamioka, Eigo Kuwata, Kazuhiko Nakahara, Yoshitaka Kamo, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric) EMT2018-29 MW2018-44 OPE2018-32 EST2018-27 MWP2018-28
A 26-W X-band high efficiency GaN MMIC power amplifier with compact spurious suppression filters is presented. GaN MMIC ... [more] EMT2018-29 MW2018-44 OPE2018-32 EST2018-27 MWP2018-28
pp.119-124
MW, ED 2017-01-27
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
pp.75-79
ED 2016-01-20
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell
Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric) ED2015-119
A millimeter wave oscillation was observed in GaN HEMT unit cell. To prevent this oscillation, we performed electromagne... [more] ED2015-119
pp.43-48
MW, ED 2015-01-16
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] ED2014-129 MW2014-193
pp.71-76
MW, OPE, EMT, MWP, EST, IEE-EMT [detail] 2014-07-17
10:00
Hokkaido Muroran Inst. of Tech. C-Ku Band Ultra Broadband High Power Reactive Matching MMIC Amplifier using Broadband Interstage Matching Network
Shuichi Sakata, Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Hidetoshi Koyama, Yoshitaka Kamo, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-53 OPE2014-22 EST2014-14 MWP2014-11
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] MW2014-53 OPE2014-22 EST2014-14 MWP2014-11
pp.1-5
MW, OPE, EMT, MWP, EST, IEE-EMT [detail] 2014-07-17
10:25
Hokkaido Muroran Inst. of Tech. X Band High Power and High Efficiency Amplifier with 2nd Harmoics rejection circuits
Eigo Kuwata, Koji Yamanaka, Shuichi Sakata, Hidetoshi Koyama, Yoshitaka Kamo, Akihiro Ando, Kazuhiko Nakahara, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-54 OPE2014-23 EST2014-15 MWP2014-12
 [more] MW2014-54 OPE2014-23 EST2014-15 MWP2014-12
pp.7-10
MW 2014-03-05
14:20
Ehime Ehime University An X-Band GaN High-Power Amplifier with Input and Output 2nd-harmonic Terminating Networks
Hiromitsu Uchida, Masatake Hangai, Koji Yamanaka, Hiroshi Fukumoto, Nobuhiro Kikuchi, Hidetoshi Koyama, Yoshitaka Kamo (Mitsubishi Electric) MW2013-219
 [more] MW2013-219
pp.129-132
MW, ED 2013-01-18
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of drain leakage current in AlGaN/GaN HEMT
Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] ED2012-125 MW2012-155
pp.69-74
ED, MW 2010-01-15
11:20
Tokyo Kikai-Shinko-Kaikan Bldg An X-band GaN HEMT T/R Switch with 50% Bandwidth
Masatake Hangai, Yukinobu Tarui, Yoshitaka Kamo, Morishige Hieda (Mitsubishi Electric Corp.) ED2009-194 MW2009-177
An X-band high-power T/R switch with bandwidth extension circuit has been developed. The proposed circuit is based on se... [more] ED2009-194 MW2009-177
pp.111-115
MW 2008-06-27
14:50
Aichi Toyohashi Univ. of Tech. Efficiency Enhancement of GaN HEMTs with Harmonic Tuning Technique
Koji Yamanaka, Hifumi Noto, Makoto Kimura, Kazuhisa Yamauchi, Yoshitaka Kamo, Eigo Kuwata, Hiroshi Otsuka, Akira Inoue (Mitsubishi Electric) MW2008-44
In this paper, high efficiency operation of GaN HEMTs with harmonic tuning is presented. As power density of GaN HEMTs i... [more] MW2008-44
pp.69-74
MW 2007-09-05
17:20
Tochigi Utsunomiya Univ. Series-shunt and shunt type S-band 100W GaN FET Switch
Masatake Hangai, Tamotsu Nishino, Yoshitaka Kamo, Moriyasu Miyazaki (Mitsubishi Electric Corp.) MW2007-94
(To be available after the conference date) [more] MW2007-94
pp.71-75
MW, ED 2005-01-18
11:10
Tokyo   -
Tetsuo Kunii, Masahiro Totsuka, Yoshitaka Kamo, Yoshitsugu Yamamoto, -, -, Toshihiko Shiga, -, -, -, -, Akira Inoue, Tomoki Oku, Takuma Nanjo, Toshiyuki Oishi (Mitsubishi Electric)
 [more] ED2004-216 MW2004-223
pp.25-30
 Results 1 - 13 of 13  /   
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