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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-10-18
13:00		 Miyagi Niche, Tohoku Univ. Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer
Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) SDM2018-60		 We have reported that the effect of nitrogen-doped LaB6 interfacial layer on the improvement of pentacene-based device c... [more] SDM2018-60
pp.41-45
SDM 2017-10-25
16:30		 Miyagi Niche, Tohoku Univ. [Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator
Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-54		 The grain growth of a pentacene thin film, which is a well-known p-type organic semiconductor, is sensitive to underneat... [more] SDM2017-54
pp.25-30
OME, SDM 2017-04-20
16:45		 Kagoshima Tatsugochou Shougaigakushuu Center A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4		 High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] SDM2017-4 OME2017-4
pp.15-18
SDM 2016-10-27
10:25		 Miyagi Niche, Tohoku Univ. A Study on Pentacene Film Formation on SiO2 with Wet Process for Bottom-Contact Type OFETs
Yasutaka Maeda, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2016-74		 The growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneath mate... [more] SDM2016-74
pp.31-34
SDM, OME 2016-04-08
12:00		 Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer
Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech) SDM2016-3 OME2016-3		 High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (O... [more] SDM2016-3 OME2016-3
pp.11-15
SDM 2015-10-30
13:50		 Miyagi Niche, Tohoku Univ. A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator
Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.) SDM2015-80		 The grain growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneat... [more] SDM2015-80
pp.49-52
SDM 2013-10-18
10:00		 Miyagi Niche, Tohoku Univ. A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93		 It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrog... [more] SDM2013-93
pp.27-31
 Results 1 - 7 of 7  /   
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