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Committee Date Time Place Paper Title / Authors Abstract Paper #
AP, MW
(Joint)		 2016-09-16
09:20		 Ibaraki AIST 60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15um GaN HEMT Technology
Takuma Torii, Shohei Imai, Hiroaki Maehara, Tetsuo Kunii, Takuo Morimoto, Norihiro Yunoue, Miyo Miyashita, Miyazaki Yasunori, Tsuyama Yoshinori, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-83		  [more] MW2016-83
pp.53-57
MW 2012-06-29
14:00		 Gifu Gifu Univ. C-band 220W High Efficiency GaN Amplifier
Hiroaki Maehara, Koji Yamanaka, Naoki Kosaka, Jun Nishihara, Keiichi Kawashima, Masatoshi Nakayama (Mitsubishi Electric) MW2012-22		 In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. Recen... [more] MW2012-22
pp.19-24
MW 2011-10-20
09:00		 Tokyo The University of Electro-Communications X-Band 120W internally matched GaN amplifier in small package
Hiroaki Maehara, Hiromitsu Uchida, Hiromitsu Utsumi, Jun Nishihara, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Melco) MW2011-85		 In this paper, a small package internally matched GaN HEMT high power amplifier operating at X-band is presented. Radar ... [more] MW2011-85
pp.1-5
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