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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-06-26
14:10		 Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) [Invited Lecture] Demonstration of Crystal Phase Junction Transistor
Katsuhiro Tomioka, Yu Katsumi, Junichi Motohisa (Hokkaido Univ.) SDM2023-33		  [more] SDM2023-33
pp.23-27
SDM 2021-01-28
15:05		 Online Online [Invited Talk] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure
Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.) SDM2020-52		 We demonstrate vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs core-multishell (CMS) nanowire (NW)/Si h... [more] SDM2020-52
pp.13-16
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
11:40		 Osaka Osaka University Nakanoshima Center Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs
Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95		 Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with... [more] PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95
pp.247-250
SDM 2014-06-19
14:40		 Aichi VBL, Nagoya Univ. [Invited Lecture] Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions
Katsuhiro Tomioka (Hokkaido Univ./JST), Takashi Fukui (Hokkaido Univ.) SDM2014-54		  [more] SDM2014-54
pp.59-63
SDM 2014-01-29
11:15		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Integration of III-V Nanowires on Si : From High-Performance Vertical FET to Steep-Slope Switch
Katsuhiro Tomioka (Hokkaido Univ./JST-PRESTO), Takashi Fukui (Hokkaido Univ.) SDM2013-139		  [more] SDM2013-139
pp.17-22
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