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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
PRMU 2022-10-21
15:55
Tokyo Miraikan - The National Museum of Emerging Science and Innovation
(Primary: On-site, Secondary: Online)
Fine-grained Action Recognition Using Hand Trajectory Features for First-Person Cooking Videos
Sota Miyamoto (Tokyo Tech), Yagi Takuma (UTokyo), Ushiku Yoshitaka, Atsushi Hashimoto (OSX), Nakamasa Inoue (Tokyo Tech) PRMU2022-29
Action recognition in kitchen environments is a crucial topic in computer vision and robotics
with application toward f... [more]
PRMU2022-29
pp.41-46
CNR 2022-09-22
10:30
Hokkaido Hokkaido University
(Primary: On-site, Secondary: Online)
Proposal for a mimetic agent that transforms itself into a recommendation target
Ryo Fukushima (Nichidai), Keisuke Suzuki (Sendai), Ryosuke Kawashima (Nichidai), Yagi Takuma (Toudai), Jun Baba, Takuma Iwamoto, Daisuke Endo (CyberAgent), Akihiro Miyata, Masahiko Oosawa (Nichidai) CNR2022-9
(To be available after the conference date) [more] CNR2022-9
pp.7-12
PRMU 2020-10-09
13:00
Online Online Style Adapted DataBase: Generalizing Hand Segmentation via Semantics-aware Stylization
Takehiko Ohkawa, Takuma Yagi, Yoichi Sato (UTokyo) PRMU2020-23
Domain shift in first-person vision degrades the performance of hand segmentation, which is caused by changes in lightin... [more] PRMU2020-23
pp.26-31
PRMU 2018-10-19
14:00
Kanagawa   Human-Computer Interaction: an User Evaluation Perspective
Takuma Yagi (UTokyo), Seitaro Shinagawa, Kai Akiyama (NAIST), Kato Hirotaka (Nagoya Univ.), Ryo Shimamura, Tasuku Matayoshi (Waseda Univ.) PRMU2018-67
(To be available after the conference date) [more] PRMU2018-67
pp.1-4
MW, ED 2007-01-19
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition
Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT)
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] ED2006-233 MW2006-186
pp.183-187
 Results 1 - 5 of 5  /   
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