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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2009-11-20
11:20		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement
Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130		 Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] ED2009-151 CPM2009-125 LQE2009-130
pp.109-114
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