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Committee Date Time Place Paper Title / Authors Abstract Paper #
PRMU 2018-12-13
10:00		 Miyagi   Style conversion
Miduki Mori, Toshiki Nakamura, Hideaki Hayashi, Seiichi Uchida (Kyushu Univ.) PRMU2018-75		 In this research, in order to find the boundary between handwritten character and typeface, we attempt to acquire a func... [more] PRMU2018-75
pp.1-6
PRMU 2018-12-13
10:15		 Miyagi  
Toshiki Nakamura, Seiichi Uchida (Kyushu Univ.) PRMU2018-76		 The purpose of this research is magnifying scene texts using convolutional neural network (CNN) with end-to-end.
We tr... [more]		 PRMU2018-76
pp.7-12
ICD 2018-04-19
10:10		 Tokyo   Reliability Enhancement Technique with Horizontal Error Detection and Vertical-LDPC in 3D-TLC NAND Flash Memories
Shun Suzuki, Yoshiaki Deguchi, Toshiki Nakamura, Kyoji Mizoguchi, Ken Takeuchi (Chuo Univ.) ICD2018-1		 Conventional Asymmetric Coding (AC) has been proposed for improving NAND flash memories. In this work, Horizontal Error ... [more] ICD2018-1
pp.1-6
ICD 2017-04-20
14:15		 Tokyo   [Invited Lecture] TLC NAND Flash Memory Control Techniques to Reduce Errors of Read-Hot and Cold Data for Data Centers
Toshiki Nakamura, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2017-6		 In cloud data centers, NAND flash memory stores both read-hot and cold data. This paper describes that the threshold vol... [more] ICD2017-6
pp.29-34
ICD, CPSY 2016-12-15
15:30		 Tokyo Tokyo Institute of Technology [Poster Presentation] A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories
Toshiki Nakamura, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) ICD2016-73 CPSY2016-79		 The capacity of NAND flash memory can be expanded by multi-level cell technology. In particular, 3-bit/cell triple-level... [more] ICD2016-73 CPSY2016-79
p.65
 Results 1 - 5 of 5  /   
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