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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2019-01-18
10:40		 Tokyo Hitachi, Central Research Lab. The failure mode analysis on GaN-HEMT under High temperature operation
Yasuyo Yotsuda (SEDI), Yasunori Tateno, Takumi Yonemura, Masato Furukawa, Hiroshi Yamamoto (SEI), Yukinori Nose, Satoshi Shimizu (SEDI) ED2018-81 MW2018-148		 (To be available after the conference date) [more] ED2018-81 MW2018-148
pp.67-70
ED 2014-08-01
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 HAXPES Analysis for GaAs Surface State for Electronics Devices
Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI) ED2014-61		 Abstract The surface states of GaAs have been characterized, by using the hard x-ray photoemission spectroscopy (HAXPES)... [more] ED2014-61
pp.47-50
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