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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, OPE, LQE, R, EMD 2015-08-27
11:00		 Aomori Aomori-Bussankan-Asupamu Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32		 Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32
pp.9-11
SDM 2015-06-19
15:50		 Aichi VBL, Nagoya Univ. Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52		 a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] SDM2015-52
pp.75-80
SDM 2013-12-13
09:00		 Nara NAIST Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress
Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116		 In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] SDM2013-116
pp.1-5
SDM 2012-12-07
13:30		 Kyoto Kyoto Univ. (Katsura) Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2012-125		 Transparent amorphous oxide semiconductor (TAOS) has attracted considerable attention as an alternative material for a-S... [more] SDM2012-125
pp.59-64
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