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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2022-08-10
15:15		 Online   [Invited Talk] A CMOS Image Sensor and an AI Accelerator for Realizing Edge-Computing-Based Surveillance Camera Systems
Fukashi Morishita, Norihito Kato, Satoshi Okubo, Takao Toi, Mitsuru Hiraki, Sugako Otani, Hideaki Abe, Yuji Shinohara, Hiroyuki Kondo (Renesas Electronics) SDM2022-52 ICD2022-20		 This paper presents a CMOS image sensor and an AI accelerator to realize surveillance camera systems based on edge compu... [more] SDM2022-52 ICD2022-20
pp.83-86
ICD 2007-04-12
14:20		 Oita   A voltage scalable advanced DFM RAM with accelerated screening for low power SoC platform
Hiroki Shimano, Fukashi Morishita, Katsumi Dosaka, Kazutami Arimoto (Renesas Technology Corp.) ICD2007-8		 The advanced-DFM (Design For Manufacturability) RAM provides the solution for the limitation of SRAM voltage scaling dow... [more] ICD2007-8
pp.41-46
ICD, VLD 2006-03-10
15:35		 Okinawa   An On-chip PVT Control System for Worst-caseless Lower Voltage SoC Design
Takayuki Gyohten, Fukashi Morishita (Renesas Technology Corp.), Mako Okamoto (Daioh Electric Corp.), Katsumi Dosaka, Kazutami Arimoto (Renesas Technology Corp.) 		In this paper, we propose on-chip PVT (process, voltage, and temperature) control system for worst-caseless lower voltag... [more] VLD2005-132 ICD2005-249
pp.61-66
SIP, ICD, IE, IPSJ-SLDM 2005-10-20
16:10		 Miyagi Ichinobo, Sakunami-Spa A Soft-Error-Immune TCAM Archiecture with Associated Embedded DRAM
Yuji Yano, Hideyuki Noda, Katsumi Dosaka, Fukashi Morishita, Kazunari Inoue, Toshiyuki Ogawa, Kazutami Arimoto (Renesas) 		 [more] SIP2005-112 ICD2005-131 IE2005-76
pp.101-105
SIP, ICD, IE, IPSJ-SLDM 2005-10-20
16:30		 Miyagi Ichinobo, Sakunami-Spa A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI
Takayuki Gyohten, Fukashi Morishita, Hideyuki Noda (Renesas Technology Corp.), Mako Okamoto (Daioh Electric Corp.), Takashi Ipposhi, Shigeto Maegawa, Katsumi Dosaka, Kazutami Arimoto (Renesas Technology Corp.) 		We propose a novel capacitorless twin-transistor random access memory (TTRAM). The 2Mb test device has been fabricated o... [more] SIP2005-113 ICD2005-132 IE2005-77
pp.107-112
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