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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-06-26
14:10
Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) [Invited Lecture] Demonstration of Crystal Phase Junction Transistor
Katsuhiro Tomioka, Yu Katsumi, Junichi Motohisa (Hokkaido Univ.) SDM2023-33
 [more] SDM2023-33
pp.23-27
SDM 2021-01-28
15:05
Online Online [Invited Talk] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure
Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.) SDM2020-52
We demonstrate vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs core-multishell (CMS) nanowire (NW)/Si h... [more] SDM2020-52
pp.13-16
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
11:40
Osaka Osaka University Nakanoshima Center Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs
Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95
Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with... [more] PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95
pp.247-250
ICD, ITE-IST 2010-07-23
11:55
Osaka Josho Gakuen Osaka Center Interleaved ramp wave generator for single slope ADC
Yukinobu Makihara, Shin Muon, Masayuki Ikebe, Junichi Motohisa, Eiichi Sano (Hokkaido Univ.)
 [more]
ICD, ITE-IST 2009-10-02
09:35
Tokyo CIC Tokyo (Tamachi) Meta-Stable Characteristic of Single-Slope ADC with Time to Digital Convertor for CMOS-imager Sensor
Shin Muon, Masayuki Ikebe, Junichi Motohisa, Eiichi Sano (Hokkaido Univ.) ICD2009-47
We have proposed the method of re-measuring quantizing error of Single-Slope ADC for CMOS imager with TDC (Time-to-Digit... [more] ICD2009-47
pp.75-80
SDM, ED 2009-02-26
15:00
Hokkaido Hokkaido Univ. Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.) ED2008-227 SDM2008-219
 [more] ED2008-227 SDM2008-219
pp.19-22
ICD, ITE-IST 2008-10-24
12:30
Hokkaido Hokkaido University All digital PLL with independent loop characteristic by using fine clock-period comparator
Yukinobu Makihara, Masayuki Ikebe, Junichi Motohisa, Eiichi Sano (Hokkaido Univ.) ICD2008-87
We proposed new architecture of phase-locked loop (PLL) by using clock-period comparison. For a digitally controlled PLL... [more] ICD2008-87
pp.165-170
ED, SDM 2008-01-30
13:55
Hokkaido   Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE
Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) ED2007-238 SDM2007-249
Semiconductor nanowires are attracting much attention as a new class of nanoscale materials. Particularly, vertical surr... [more] ED2007-238 SDM2007-249
pp.5-10
 Results 1 - 8 of 8  /   
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