Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2023-12-07 13:50 |
Aichi |
WINC AICHI |
Development of planar type electron emission device using graphene/h-BN/Si structure Katsuhisa Murakami, Hiromasa Murata, Masayoshi Nagao (AIST), Masahiro Sasaki, Yoichi Yamada (Univ. Tsukuba) ED2023-39 |
[more] |
ED2023-39 pp.5-7 |
ED |
2023-12-07 14:15 |
Aichi |
WINC AICHI |
Effect of multi-reflection in Graphene-Insulator-Semiconductor-structured electron source Takao Koichi, Shogo Kawashima, Satoshi Abo, Fujio Wakaya (Osaka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2023-40 |
In the graphene-insulator-semiconductor-structured electron source, the characteristics of emitted electron beam could b... [more] |
ED2023-40 pp.8-10 |
ED |
2023-12-08 09:50 |
Aichi |
WINC AICHI |
Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] |
ED2023-48 pp.39-42 |
ED |
2023-12-08 10:25 |
Aichi |
WINC AICHI |
Photo-assisted Electron Emission Properties of Graphene-Oxide-Semiconductor Electron Source Hidetaka Shimawaki (Hachinohe Inst. Technol.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2023-49 |
Planar-type electron sources based on graphene/oxide/semiconductor (GOS) structures have demonstrated excellent performa... [more] |
ED2023-49 pp.43-44 |
ED |
2023-12-08 11:15 |
Aichi |
WINC AICHI |
Fabrication Process Optimization for Improving the Performance of Ultra-High Density Electrospray Ion Sources with a Capillary-Needle-Emitter Structure Shujun Guo (YNU), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2023-51 |
We study electrospray ion sources that can be mounted on nano-satellites, which use ionic liquid as a propellant and gai... [more] |
ED2023-51 pp.49-52 |
ED |
2022-12-08 12:30 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Fabrication of a Double-Emitter Structure for Ultra-High Density Electrospray Ion Sources Shujun Guo (YNU), Masayoshi Nagao, Katsuhisa Murakami, Hiromasa Murata (AIST), Yoshinori Takao (YNU) ED2022-49 |
We study electrospray thrusters that can be mounted on nano-satellites. The thrust density of these thrusters is lower t... [more] |
ED2022-49 pp.1-3 |
ED |
2022-12-08 16:25 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Simulation of Electron Transmission through Graphene at GIS Electron Source Fujio Wakaya, Daichi Terakado, Shogo Kawashima, Satoshi Abo (Osaka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2022-58 |
[more] |
ED2022-58 pp.29-30 |
ED |
2022-12-09 10:15 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Development of Graphene Planar Electron Source for Operation in Liquid Katsuhisa Murakami, Hiromasa Murata, Masayoshi Nagao (AIST) ED2022-60 |
[more] |
ED2022-60 pp.35-36 |
ED |
2022-12-09 10:40 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Development of low-temperature synthesis of h-BN on Si substrate and its application to graphene/h-BN/Si stacked planar-type electron emission devices Masaya Yamamoto (Shizuoka Univ./ AIST), Hiromasa Murata, Masayoshi Nagao (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.), Katsuhisa Murakami (AIST) ED2022-61 |
[more] |
ED2022-61 pp.37-38 |
ED |
2022-12-09 15:35 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Electron emission properties of planar-type electron source based on nanocrystalline silicon Hidetaka Shimawaki (Hachinohe Inst. Technol.), Hiromasa Murata, Mashayoshi Nagao, Katsuhisa Murakami (AIST) ED2022-68 |
[more] |
ED2022-68 pp.59-61 |
ED |
2022-12-09 16:25 |
Aichi |
12/8 Nagoya University, 12/9 WINC AICHI |
Development of field-emitter-array technology for high current operation Hiromasa Murata, Katsuhisa Murakami, Masayoshi Nagao (AIST) ED2022-70 |
In our previous study, we have developed a volcano-structured double-gate field emitter array (FEA). We have achieved hi... [more] |
ED2022-70 pp.64-65 |
ED |
2021-12-09 10:40 |
Online |
Online |
Development of planar type electron emission sources using atomic layered materials Katsuhisa Murakami (AIST) ED2021-39 |
[more] |
ED2021-39 pp.11-13 |
ED |
2021-12-09 15:35 |
Online |
Online |
Optimal design of planar type electron gun using graphene gate electrode for microscope Yukino Kameda (Shizuoka Univ. /AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.) ED2021-47 |
A planar type electron gun using graphene gate electrode can be operated in a low vacuum condition and a low applied vol... [more] |
ED2021-47 pp.47-50 |
ED |
2019-11-21 13:50 |
Tokyo |
|
Fabrication of field emitter array with integral Si ballast resistor Hidetoshi Shinya, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2019-61 |
The emission current from field emitter fluctuates due to surface migration and adsorption-desorption of residual gas mo... [more] |
ED2019-61 pp.9-12 |
ED |
2019-11-21 15:20 |
Tokyo |
|
Development of mA-Class Planar-Type Electron Sources Based on Graphene-Oxide-Semiconductor Structure for Micro Ion Engines Ryo Furuya (YNU/AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Yoshinori Takao (YNU) ED2019-64 |
(To be available after the conference date) [more] |
ED2019-64 pp.21-24 |
ED |
2019-11-21 15:45 |
Tokyo |
|
Volcano structured field emitter array for large current Yuta Nabuchi (AIST/Shizuoka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.) ED2019-65 |
We have developed a Volcano-structured double gate Spindt-type field emitter arrays (VDGS-FEA). It can focus the electro... [more] |
ED2019-65 pp.25-28 |
ED |
2019-11-21 16:35 |
Tokyo |
|
Fabrication of High-Density Emitter Array and Ion Extraction Experiments for Electrospray Thrusters Kanta Suzuki (YNU/AIST), Naoki Inoue (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST), Sommawan Khumpuang, Shiro Hara (AIST/MINIMAL), Yoshinori Takao (YNU) ED2019-67 |
(To be available after the conference date) [more] |
ED2019-67 pp.31-34 |
ED |
2019-11-22 12:05 |
Tokyo |
|
Planar-type electron source based on a graphene/h-BN heterostructure Tomoya Igari (Univ. of Tsukuba/AIST), Masayoshi Nagao (AIST), Kazutaka Mitsuishi (NIMS), Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba), Katsuhisa Murakami (AIST/Univ. of Tsukuba) ED2019-75 |
In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostr... [more] |
ED2019-75 pp.63-66 |
ED |
2018-10-24 14:00 |
Tokyo |
|
Improvements of a number of active tips and emission measurements from individual tips in volcano-structured Spindt-type field emitter arrays Hidetoshi Shinya, Hidekazu Murata, Takahiro Ikeda, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2018-26 |
We have developed an electron optical instrument for evaluation of multi emitters. The instrument enables us to obtain q... [more] |
ED2018-26 pp.1-4 |
ED |
2018-10-24 14:25 |
Tokyo |
|
Effects of discharge gas species (Ar, Kr) on fabrication of Spindt type emitter cathode using high power pulsed magnetron sputtering Hyuga Taniguchi, Kei Oya, Takeo Nakano (Seikei Univ.), Masayoshi Nagao, Hisashi Ohsaki, Katsuhisa Murakami (AIST) ED2018-27 |
Spindt-type emitter is one of the vacuum electron sources prepared by semiconductor manufacturing technologies. On its f... [more] |
ED2018-27 pp.5-8 |