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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2012-10-26
13:00		 Niigata   Deposition characteristics of ZnO thin films using high-energy H2O genarated by a catalytic reaction
Kanji Yasui, Hitoshi Miura, Masami Tahara, Souichi Satomoto (Nagaoka Univ. Technol.) 		 [more]
EMD, CPM, OME 2011-06-30
10:50		 Tokyo   Electrical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Souichi Satomoto, Masami Tahara, Hitoshi Miura, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) EMD2011-10 CPM2011-46 OME2011-24		 (To be available after the conference date) [more] EMD2011-10 CPM2011-46 OME2011-24
pp.11-16
CPM, LQE, ED 2010-11-11
10:00		 Osaka   Optical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Hitoshi Miura, Takashi Otani, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagaoka Univ. Technol.) ED2010-142 CPM2010-108 LQE2010-98		  [more] ED2010-142 CPM2010-108 LQE2010-98
pp.1-6
CPM 2010-07-29
14:55		 Hokkaido Michino-Eki Shari Meeting Room Epitaxial growth of ZnO films using hot water molecules generated by catalytic reaction
Masami Tahara, Hitoshi Miura, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagoka Univ. of Tech.) CPM2010-33		 We have developed a new CVD method for thin film growth of metal oxides using a reaction between organometallic compound... [more] CPM2010-33
pp.11-15
CPM 2007-11-17
09:50		 Niigata Nagaoka University of Technology Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique，and dependence of top Si layer thickness
Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117		 Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane ... [more] CPM2007-117
pp.65-68
CPM 2006-08-07
16:15		 Iwate Iwate Univ. Low temperature epitaxial growth of 3C-SiC on SOI substrate using Hot-Mesh CVD method
Hitoshi Miura, Taishi Kurimoto, Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech.) 		 [more] CPM2006-46
pp.31-36
 Results 1 - 6 of 6  /   
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