IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
KBSE, SC 2020-11-13
15:10		 Online Online + Kikai-Shinko-Kaikan Bldg.
(Primary: Online, Secondary: On-site)		 [Poster Presentation] Deploying a collaborative materials vocabulary system for a materials data platform
Asahiko Matsuda, Hiroyuki Naito, Takuya Kadohira (NIMS) KBSE2020-17 SC2020-21		 We constructed a materials vocabulary system to integrate the difference in terminologies among materials science subdom... [more] KBSE2020-17 SC2020-21
p.32
SDM 2013-10-18
11:00		 Miyagi Niche, Tohoku Univ. Classical molecular dynamics simulations of plasma-induced physical damage -- defect generation mechanisms in fin-type MOSFET --
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2013-95		  [more] SDM2013-95
pp.37-40
SDM 2012-10-25
16:35		 Miyagi Tohoku Univ. (Niche) Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching
Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) 		Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradati... [more]
SDM 2011-10-21
14:00		 Miyagi Tohoku Univ. (Niche) [Invited Talk] Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110		 We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] SDM2011-110
pp.73-78
SDM 2011-10-21
14:50		 Miyagi Tohoku Univ. (Niche) Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching
Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-111		 We present analysis techniques for plasma process-induced damage in the Si substrate. The techniques are based on the el... [more] SDM2011-111
pp.79-84
 Results 1 - 5 of 5  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan