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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 22  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2023-03-02
16:25
Tottori Tottori Univ.
(Primary: On-site, Secondary: Online)
[Special Talk] 220-325 GHz High Gain and High Common-mode rejection Differential Amplifier in 60-nm InP-HEMT technology
Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Hideaki Matsuzaki, Hiroki Sugiyama, Hiroyuki Takahashi, Hideyuki Nosaka (NTT) MW2022-169
 [more] MW2022-169
pp.70-75
ED, THz 2021-12-21
09:00
Miyagi
(Primary: On-site, Secondary: Online)
[Invited Talk] InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application
Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] ED2021-55
pp.34-39
MWP 2020-05-28
13:30
Online Online [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] MWP2020-1
pp.1-6
ED, MW 2020-01-31
14:10
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] An Accurate and Fast Permittivity Measurement System for Terahertz imaging
Teruo Jyo, Hiroshi Hamada, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) ED2019-100 MW2019-134
THz permittivity imaging using phase information is an effective solution for detecting non-metallic matter and is expec... [more] ED2019-100 MW2019-134
pp.35-40
ED, THz [detail] 2019-12-23
16:20
Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
OPE, LQE, OCS 2019-11-11
16:20
Tokyo Kikai-Shinko-Kaikan Bldg (Tokyo) [Special Invited Talk] 106 Gbit/s PAM4 60 km transmission using SOA assisted extended reach EADFB laser (AXEL)
Takahiko Shindo, Naoki Fujiwara, Shigeru Kanazawa, Masahiro Nada, Toshihide Yoshimatsu, Atsushi Kanda, Mingchen Chen, Yoshitaka Ohiso, Kimikazu Sano, Hideaki Matsuzaki (NTT) OCS2019-58 OPE2019-96 LQE2019-74
(Advance abstract in Japanese is available) [more] OCS2019-58 OPE2019-96 LQE2019-74
pp.33-36
MW, ED 2019-01-18
13:00
Tokyo Hitachi, Central Research Lab. [Invited Lecture] Ultra-high-speed IC technologies for optical and wireless communications
Hideyuki Nosaka, Munehiko Nagatani, Hiroshi Hamada, Teruo Jyo, Hitoshi Wakita, Takuya Tsutsumi, Hiroki Sugiyama, Miwa Mutoh, Minoru Ida, Hideaki Matsuzaki (NTT) ED2018-84 MW2018-151
 [more] ED2018-84 MW2018-151
pp.79-84
LQE, OPE, SIPH 2018-12-06
15:50
Tokyo Keio University [Invited Talk] 2-um-band tunable laser for CO2 gas sensing
Yuta Ueda, Takahiko Shindo, Takuya Kanai, Makoto Shimokozono, Naoki Fujiwara (NTT), Hiroyuki Ishii (former NTT), Hideaki Matsuzaki (NTT) OPE2018-104 LQE2018-114 SIPH2018-20
 [more] OPE2018-104 LQE2018-114 SIPH2018-20
pp.35-38
AP, MW
(Joint)
2018-09-20
14:55
Tokyo Tokyo Tech 300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology
Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] MW2018-60
pp.7-12
ED, MW 2018-01-25
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate
Yuta Shiratori, Takuya Hoshi, Minoru Ida, Hideaki Matsuzaki (NTT) ED2017-96 MW2017-165
(To be available after the conference date) [more] ED2017-96 MW2017-165
pp.15-18
ED, THz 2017-12-19
15:35
Miyagi RIEC, Tohoku Univ High-speed THz Permittivity Measurement System
Teruo Jyo, Hiroshi Hamada, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) ED2017-92
 [more] ED2017-92
pp.77-80
LQE, LSJ 2017-05-26
14:10
Ishikawa   28-Gbit/s 80-km transmission with 1.3 μm wavelength SOA assisted extended reach EADFB laser (AXEL)
Takahiko Shindo, Wataru Kobayashi, Koichi Hasebe, Naoki Fujiwara, Toshihide Yoshimatsu, Shigeru Kanazawa, Tetsuichiro Ohno, Hiroaki Sanjoh, Yoshitaka Ohiso, Hiroyuki Ishii, Yoshiaki Sone, Hideaki Matsuzaki (NTT) LQE2017-17
 [more] LQE2017-17
pp.69-72
ED 2016-12-19
14:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well
Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] ED2016-80
pp.1-5
LQE, OPE, OCS 2016-10-28
11:30
Miyazaki Miyazaki Citizen's Plaza High-speed avalanche photodiode for 56-Gbit/s 40-km transmission
Masahiro Nada, Takuya Hoshi, Hideaki Matsuzaki (NTT) OCS2016-50 OPE2016-91 LQE2016-66
(Advance abstract in Japanese is available) [more] OCS2016-50 OPE2016-91 LQE2016-66
pp.87-90
ED, LQE, CPM 2015-11-27
10:50
Osaka Osaka City University Media Center Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate
Dariush H. Zadeh, Tanabe Shinichi, Watanabe Noriyuki, Matsuzaki Hideaki (NTT)
 [more]
EMT, MW, OPE, MWP, EST, IEE-EMT [detail] 2015-07-16
16:35
Hokkaido Kushiro City Lifelong Learning Center [Invited Talk] Recent progresses in high-speed photodiodes for optical and wireless communications systems
Masahiro Nada, Toshihide Yoshimatsu, Hideaki Matsuzaki (NTT) EMT2015-19 MW2015-57 OPE2015-31 EST2015-23 MWP2015-22
 [more] EMT2015-19 MW2015-57 OPE2015-31 EST2015-23 MWP2015-22
pp.61-64
LQE, OPE 2015-06-19
16:15
Tokyo   High-linearity avalanche photodiode and its application for 28Gbaud PAM4 operation
Masahiro Nada, Takuya Hoshi, Hirofumi Yamazaki, Haruki Yokoyama, Toshikazu Hashimoto, Hideaki Matsuzaki (NTT) OPE2015-19 LQE2015-29
We present a unique configuration of high-speed avalanche photodiode (APD) for ensuring high linearity. The APD exhibits... [more] OPE2015-19 LQE2015-29
pp.43-46
EMD, LQE, OPE, CPM, R 2014-08-22
11:30
Hokkaido Otaru Economy Center High-speed avalanche photodiodes with vertical illumination structure for reliability and stability
Masahiro Nada, Haruki Yokoyama, Yoshifumi Muramoto, Hideaki Matsuzaki (NTT) R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45
 [more] R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45
pp.91-94
ED, MW 2014-01-17
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. A design method of the full-waveguide-band MMIC mixer for 90-140 GHz
Hiroshi Hamada, Toshihiko Kosugi, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka (NTT) ED2013-129 MW2013-194
MMIC mixer circuit for the full-waveguide-band spectrum analysis in 90-140 GHz will be reported. We designed the drain-i... [more] ED2013-129 MW2013-194
pp.109-113
LQE, OCS, OPE 2013-10-25
11:15
Fukuoka   High-performance InAlAs avalanche photodiode for 25-Gbit/s applications
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Tadao Ishibashi, Hideaki Matsuzaki (NTT) OCS2013-69 OPE2013-115 LQE2013-85
 [more] OCS2013-69 OPE2013-115 LQE2013-85
pp.99-102
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