IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2017-05-26
10:45
Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
SANE 2017-01-27
14:15
Nagasaki Nagasaki Prefectural Art Museum A study on height measurement error by cross track interference SAR
Akitsugu Nadai, Jyunpei Uemoto, Syoichiro Kojima, Toshihiko Umehara, Tatsuharu Kobayashi, Takashi Matsuoka, Seiho Uratsuka (NICT) SANE2016-114
To measure the height distribution of the surface over a wide range, Crosstrack Interferometric Synthetic Aperture Radar... [more] SANE2016-114
pp.105-108
ED 2015-07-24
13:15
Ishikawa IT Business Plaza Musashi 5F Electrical characteristics of N-polar p-type GaN Schottky contacts
Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-36
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) ... [more] ED2015-36
pp.1-4
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
RCS, AP 2004-10-28
11:10
Niigata Niigata University Decoding Technique Employing LD-DPB Method in VIP-MIMO Systems
Kiyotaka Kobayashi, Yutaka Murakami, Masayuki Orihashi, Takashi Matsuoka (Matsushita)
This paper examines a decoding technique using likelihood detection method utilizing decision of partial bits (LD-DPB) i... [more] AP2004-145 RCS2004-166
pp.73-78
RCS, AP 2004-10-28
11:30
Niigata Niigata University Investigation on parameter of phase rotation in transmission technique utilizing LC-diversity for MIMO systems
Yutaka Murakami, Kiyotaka Kobayashi, Masayuki Orihashi, Takashi Matsuoka (Matsushita)
The rapidly increasing number of users and services in mobile communications requires efficient usage of the available f... [more] AP2004-146 RCS2004-167
pp.79-86
RCS 2004-06-18
13:00
Miyagi Tohoku University BER performance analysis in 16QAM channel employing likelihood detection utilizing decision of partial bits
Yutaka Murakami, Kiyotaka Kobayashi, Masayuki Orihashi, Takashi Matsuoka (Matsushita)
The rapidly increasing number of users and services in mobile communications requires efficient usage of the available f... [more] RCS2004-80
pp.25-30
 Results 1 - 7 of 7  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan