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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-02-22
15:15		 Okinawa Okinawaken-Seinen-Kaikan Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory
Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) ED2009-201 SDM2009-198		 We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using therma... [more] ED2009-201 SDM2009-198
pp.29-33
SDM 2009-12-04
15:50		 Nara NAIST Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing
Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166		 Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] SDM2009-166
pp.79-82
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