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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2010-07-30 09:55 |
Hokkaido | Michino-Eki Shari Meeting Room | Atomic layer deposition (ALD) of vanadium nitride films using TDEAV Mayumi B. Takeyama, Masaru Sato (kitami Inst. of Tech.), Hiroshi Sudoh, Hideaki Machida (Gas-phase Growth Ltd.), Shun Ito, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami inst. of tech.)  CPM2010-37 |
An extremely thin barrier deposited at a low temperature is desired in Cu interconnects of 32 nm node technologies. We ... [more] | CPM2010-37 pp.35-38 |
| CPM | 2009-08-11 10:50 |
Aomori | Hirosaki Univ. | Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-43 |
We have examined characteristics of ZrB2 films and found a peculiar property that the resistivity of the film depends on... [more] | CPM2009-43 pp.51-55 |
| CPM | 2009-08-11 11:15 |
Aomori | Hirosaki Univ. | Effectiveness of New Deposition Method for Barrier Metal Applicable to Through Silicon Via
-- Properties of ZrNx Film Formed at Low Temperature -- Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-44 |
A low process temperature as low as 200°C is one of the most important requirements for the metallization technology of ... [more] | CPM2009-44 pp.57-60 |
| CPM | 2007-11-16 16:10 |
Niigata | Nagaoka University of Technology | Characterization and barrier properties of ZrB2 thin films for Cu interconnects Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasuo Nakadai, Shozo Kambara (ULVAC Materials, Inc.), Masanobu Hatanaka (ULVAC, Inc.), Atsushi Noya (Kitami Inst. of Technol.) CPM2007-111 |
The extremely thin diffusion barrier deposited at low temperature is urgently required for reliable Cu interconnects ap... [more] |
CPM2007-111 pp.35-38 |
| CPM | 2007-11-16 16:35 |
Niigata | Nagaoka University of Technology | Suppression of interfacial reaction and/or diffusion in Cu/ZrN/field insulating film/Si system Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2007-112 |
We have examined the nano-crystalline thin ZrN film with a nitrogen-rich composition as an extremely thin diffusion barr... [more] | CPM2007-112 pp.39-42 |
| CPM | 2006-11-09 16:10 |
Ishikawa | Kanazawa Univ. | Thermal stability and interface moｒphology in Cu/ZrN/SiOC/Si system Atsushi Noya, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.) |
[more] | CPM2006-119 pp.37-40 |
| CPM | 2006-11-09 16:35 |
Ishikawa | Kanazawa Univ. | Novel PVD process of extremely-thin TiNx barrier with radical reaction for Cu interconnects Mayumi B. Takeyama, Tadayoshi Yanagita, Atsushi Noya (Kitami Inst. of Technol.) |
[more] | CPM2006-120 pp.41-46 |
| CPM | 2006-11-09 17:00 |
Ishikawa | Kanazawa Univ. | Barrier properties of HfNx thin films prepared by hot wire method between Cu interconnects and SiO2 or SiOC layer Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) |
[more] | CPM2006-121 pp.47-52 |
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