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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2014-04-11 10:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture Kimihiko Imura, Tatsuya Okada, Kiyoharu Shimoda, Kouya Sugihara, Takashi Noguchi (Univ. of Ryukyus)  SDM2014-13 OME2014-13 |
For a fabrication of flexible display, high quality gate insulator films on a thermally durable substrate such as plasti... [more] | SDM2014-13 OME2014-13 pp.55-57 |
| SDM, OME | 2014-04-11 10:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Fabrication of poly-Si TFT with low-temperature process using BLDA Kiyoharu Shimoda, Kouya Sugihara, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) SDM2014-14 OME2014-14 |
Poly-Si TFTs by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT witho... [more] | SDM2014-14 OME2014-14 pp.59-61 |
| SDM, OME | 2014-04-11 11:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Photoconductivity of Si Films on glass after Blue Multi-Laser Diode Annealing Charith Jayanada Koswaththage*, Satoshi Chinen, Kouya Sugihara, Tatsuya Okada, Takashi Noguchi (Uni. of the Ryukyus) SDM2014-15 OME2014-15 |
Photoconductivity of BLDA applied Si film was examined for the aim of multi-functional optical sensor application of the... [more] | SDM2014-15 OME2014-15 pp.63-65 |
| SCE | 2014-01-24 09:30 |
Tokyo | Kikaishinkou-kaikan Bldg. | Effect of quasiparticles in the intra-gap states on the property of superconducting resonators Takashi Noguchi (NAOJ), Masato Naruse (Saitama Univ.), Masakazu Sekine (Univ. of Tokyo), Kenichi Karatsu, Yutaro Sekimoto (NAOJ) SCE2013-46 |
We propose a hypothesis that there are a few numbers of quasiparticlestates inside the energy gap and analyze the surfac... [more] | SCE2013-46 pp.67-72 |
| SCE | 2014-01-24 09:55 |
Tokyo | Kikaishinkou-kaikan Bldg. | Development of Nb/Al bi-layer MKID camera
-- Temperature dependence of quality factor -- Masakazu Sekine, Yutaro Sekimoto (Univ. of Tokyo), Takashi Noguchi, Akihira Miyachi, Kenichi Karatsu (NAOJ), Tom Nitta (Univ. of Tsukuba), Shigeyuki Sekiguchi, Takashi Okada (NAOJ), Masato Naruse (Saitama Univ) SCE2013-47 |
Microwave Kinetic Inductance Detector (MKID) camera has been developed at National Astronomical Observatory of Japan for... [more] | SCE2013-47 pp.73-77 |
| SDM | 2013-12-13 13:00 |
Nara | NAIST | [Invited Talk]
Crystallization of Si Films and the Applications using BLDA (Blue Laser-Diode Annealing) Takashi Noguchi, Tatsuya Okada (Univ. of Ryukyus) SDM2013-125 |
[more] | SDM2013-125 pp.55-59 |
| SDM | 2013-12-13 13:50 |
Nara | NAIST | Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus) SDM2013-127 |
To realize a ultrathin junction with 10nm depth, a novel activation method of B dopant using soft X-ray undulator was ex... [more] | SDM2013-127 pp.67-72 |
| SCE | 2013-10-02 14:55 |
Miyagi | Tohoku University, RIEC | Development of Microwave Kinetic Inductance Detector for Obsrevation of the Cosmic Microwave Background Kenichi Karatsu (NAOJ), Masato Naruse (Saitama Univ.), Tom Nitta (Tsukuba Univ.), Masakazu Sekine, Shigeyuki Sekiguchi, Takashi Okada (Univ. of Tokyo), Yutaro Sekimoto (NAOJ/Univ. of Tokyo), Takashi Noguchi, Yoshinori Uzawa, Hiroshi Matsuo, Hitoshi Kiuchi (NAOJ) SCE2013-23 |
The development of Microwave Kinetic Inductance Detector (MKID) camera has been carried out at National Astronomical Obs... [more] | SCE2013-23 pp.21-25 |
| SCE | 2013-07-22 14:20 |
Tokyo | Kikaishinkou-kaikan Bldg. | Development of bi-layer MKID camera Masakazu Sekine (The Univ. of Tokyo), Yutaro Sekimoto, Takashi Noguchi, Akihira Miyachi, Kenichi Karatsu (NAOJ), Tom Nitta (Univ. of Tsukuba), Shigeyuki Sekiguchi (The Univ. of Tokyo), Masato Naruse (Univ. Saitama) |
[more] | |
| SDM, ED (Workshop) |
2012-06-27 17:15 |
Okinawa | Okinawa Seinen-kaikan | Crystallization of a-Si Films with Smooth Surface Using Blue-Multi-Laser-Diode-Annealing Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Takuma Nishinohara, Tomoyuki Mukae, Keisuke Yagi, Takashi Noguchi (Univ. Ryukyus) |
Crystallization of 50-nm-thick a-Si was achieved with smooth surface using Blue Multi-Laser Diode Annealing (BLDA). The ... [more] | |
| SDM, ED (Workshop) |
2012-06-27 17:30 |
Okinawa | Okinawa Seinen-kaikan | Characterization of Optimized Sputtered Poly-Si Films by Blue-Multi-Laser-Diode Annealing for High Performance Displays Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) |
As a result of Blue-Multi-Laser-Diode Annealing (BLDA) for phosphorus-doped Si films deposited by R.F. sputtering using ... [more] | |
| SDM, ED (Workshop) |
2012-06-27 17:45 |
Okinawa | Okinawa Seinen-kaikan | Effective Annealing of Si Films as an advanced LTPS Takashi Noguchi, Takuma Nishinohara, Jean de Dieu Mugiraneza, Katsuya Shirai, Tatsuya Okada (Univ. Ryukyus) |
[more] | |
| ED, SDM, CPM | 2012-05-18 14:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | Preparation and evaluation of LiMn2O4 films prepared by sputtering method Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) ED2012-37 CPM2012-21 SDM2012-39 |
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. In this research, w... [more] | ED2012-37 CPM2012-21 SDM2012-39 pp.99-104 |
| SDM, OME | 2012-04-27 16:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Crystallization of Si Thin Film on Poly-Imide Substrate by Semiconductor Blue Multi-Laser Diode Annealing Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Takashi Noguchi (Univ. Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-8 OME2012-8 |
Crystallization of a-Si films on polyimide substrate was achieved using Blue Multi-Laser Diode Annealing. Surface roughn... [more] | SDM2012-8 OME2012-8 pp.37-39 |
| SDM, OME | 2012-04-28 11:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus) SDM2012-17 OME2012-17 |
SiO2 and SiN films of 100 nm thickness were deposited on the Si substrate by RF sputtering. After thermal annealing, at ... [more] | SDM2012-17 OME2012-17 pp.75-77 |
| SDM, OME | 2012-04-28 11:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Tadashi Ohachi (Doshisha Univ.), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-18 OME2012-18 |
After performing BLDA for phosphorus-doped Si films deposited by sputtering using Ne gas, the crystallinity of the films... [more] | SDM2012-18 OME2012-18 pp.79-82 |
| SCE | 2011-07-13 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | SIS junction as microwave and millimeter wave noise source Hirofumi Inoue (Univ. of Tokyo), Takashi Noguchi (NAOJ), Kotaro Kohno (Univ. of Tokyo) SCE2011-5 |
For the accurate characterization of low noise amplifiers in the microwave frequency, a noise source using shot noise ge... [more] | SCE2011-5 pp.23-28 |
| ED, SDM | 2010-07-02 10:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Acivation behaviour for doped Si films after laser or furnace annealing Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) ED2010-85 SDM2010-86 |
After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductiv... [more] | ED2010-85 SDM2010-86 pp.149-153 |
| SDM, OME | 2010-04-23 11:40 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Simulation of dependency of photo current on intrinsic length in a-Si and c-Si thin film PIN photo sensor Akinori Sakamoto, Takashi Noguchi (University of the Ryukyus), Tadashi Ohachi (Doushisha University), Fumiaki Oshiro, Jean de Dieu Mugiraneza (University of the Ryukyus) SDM2010-5 OME2010-5 |
For hydrogenated amorphous silicon (a-Si:H) and crystal silicon (c-Si) thin film PIN photo sensors, the dependence of ph... [more] | SDM2010-5 OME2010-5 pp.19-22 |
| SDM, OME | 2010-04-23 13:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Influence of Grain Size on Gate Voltage Swing and Threshold Voltage of Poly-Si Thin Film Transistor Fumiaki Oshiro, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Tadashi Ohachi (Doshisha Univ.) SDM2010-7 OME2010-7 |
A model of defects in poly-Si film by using grain size was proposed. The gate voltage swing factor S which related to th... [more] | SDM2010-7 OME2010-7 pp.29-32 |
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